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期刊论文 [56]
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The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain
期刊论文
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2022, 卷号: 284
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Guo, Xin
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2022/08/09
Binding energy
Calculations
Gallium compounds
Graphene
Ground state
Heterojunctions
III-V semiconductors
Ohmic contacts
Schottky barrier diodes
Strain
Thermoelectric equipment
Van der Waals forces
Electronic characteristics
Graphene/GaP
In-plane strains
Interlayer coupling
Layer-spacing
Micro/nano
Nanoelectronic devices
P-type
Schottky barriers
Schottky contacts
Fermi-Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer
期刊论文
SMALL, 2022, 页码: 7
作者:
Wei, Yu-Ning
;
Hu, Xian-Gang
;
Zhang, Jian-Wei
;
Tong, Bo
;
Du, Jin-Hong
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2022/07/14
carbon nanotube films
Fermi-level pinning
germanium
metal-induced gap states
ohmic contacts
Enhanced efficiency of organic solar cells via Si-based non-conjugated small-molecule electrolyte as cathode interlayer
期刊论文
Organic Electronics, 2020, 卷号: 85
作者:
Li, Yanbo
;
Song, Wei
;
Yan, Tingting
;
Xiao, Jingbo
;
Han, Yufang
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/02/17
Cathodes
Costs
Electrolytes
Fullerenes
Molecules
Ohmic contacts
Silicon solar cells
Synthesis (chemical)
Cathode interlayers
Charge recombinations
Charge transmissions
Collection efficiency
Conjugated small molecules
Enhanced efficiency
Power conversion efficiencies
Solution processable
Low resistivity ohmic contacts on lightly doped n-type -Ga2O3 using Mg/Au
期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 卷号: 30, 页码: 3860-3864
作者:
Shi, Jianjun
;
Xia, Xiaochuan
;
Liang, Hongwei
;
Abbas, Qasim
;
Liu, Jun
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2019/12/02
Electric contactors
Electrodes
Gallium compounds
Ohmic contacts, Annealed samples
Annealing temperatures
Contact electrodes
Contact mechanism
Specific contact resistances
Surface profiles
Transmission-line measurements
Voltage characteristics, Annealing
Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2019, 卷号: 108, 页码: 197-201
作者:
Huang, Huolin
;
Sun, Zhonghao
;
Zhang, Feng
;
Li, Feiyu
;
Cao, Yaqing
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/12/02
Ohmic contacts
Modeling process
Semiconductor devices
Gallium nitride
Single-Atom-Thick Active Layers Realized in Nanolaminated Ti-3(AlxCu1-x)C-2 and Its Artificial Enzyme Behavior
期刊论文
ACS NANO, 2019, 卷号: 13, 期号: 8, 页码: 9198-9205
作者:
Li, Youbing
;
Li, Mian
;
Lu, Jun
;
Ma, Baokai
;
Wang, Zhipan
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2019/12/18
GENERALIZED GRADIENT APPROXIMATION
HYDROGEN-PEROXIDE
M(N+1)AX(N) PHASES
MAX PHASE
OHMIC CONTACTS
NANOPARTICLES
OXIDATION
TI3SIC2
H2O2
GLUCOSE
An Expanded Cox and Strack Method for Precise Extraction of Specific Contact Resistance of Transition Metal Oxide/n-Silicon Heterojunction
期刊论文
IEEE JOURNAL OF PHOTOVOLTAICS, 2019, 卷号: 9, 期号: 4, 页码: 1113-1120
作者:
Wang, Wei
;
Lin, Hao
;
Yang, Zhenhai
;
Wang, Zilei
;
Wang, Jiajia
收藏
  |  
浏览/下载:62/0
  |  
提交时间:2019/12/18
SOLAR-CELLS
SELECTIVE CONTACTS
OHMIC CONTACTS
SI
PERFORMANCE
SIMULATION
GaN based UV-LEDs with Ni/Au Nanomeshes as Transparent p-type Electrodes
期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 卷号: 216, 期号: 4
作者:
Sheikhi, Moheb
;
Xu, Houqiang
;
Jiang, Jie'an
;
Wu, Sudong
;
Yang, Xi
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2019/12/18
RESISTANCE OHMIC CONTACTS
LIGHT-EMITTING-DIODES
HIGH-PERFORMANCE
FILMS
UNIFORM
Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy
期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 10
作者:
Huan, Ya-Wei
;
Wang, Xing-Lu
;
Liu, Wen-Jun
;
Dong, Hong
;
Long, Shi-Bing
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2018/12/04
Beta-ga2o3 Single-crystals
Ohmic Contacts
Offsets
Heterostructures
Valence
Growth
Edge
Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy
期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: 57, 期号: 10
作者:
Huan, Ya-Wei
;
Wang, Xing-Lu
;
Liu, Wen-Jun
;
Dong, Hong
;
Long, Shi-Bing
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2018/12/04
Beta-ga2o3 Single-crystals
Ohmic Contacts
Offsets
Heterostructures
Valence
Growth
Edge
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