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The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain
期刊论文
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2022, 卷号: 284
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Guo, Xin
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2022/08/09
Binding energy
Calculations
Gallium compounds
Graphene
Ground state
Heterojunctions
III-V semiconductors
Ohmic contacts
Schottky barrier diodes
Strain
Thermoelectric equipment
Van der Waals forces
Electronic characteristics
Graphene/GaP
In-plane strains
Interlayer coupling
Layer-spacing
Micro/nano
Nanoelectronic devices
P-type
Schottky barriers
Schottky contacts
Insight into electronic structure and photocatalytic character of GaSe/MoS2 heterostructure by first-principles investigation
期刊论文
Solid State Communications, 2022, 卷号: 353
作者:
Lu, Xuefeng
;
Cui, Tingshu
;
Ren, Junqiang
;
Guo, Xin
;
Xue, Hongtao
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2022/08/09
Binding energy
Calculations
Energy gap
Gallium compounds
Hydrogen production
Lattice mismatch
Layered semiconductors
Light
Light absorption
Molybdenum compounds
Photocatalytic activity
Redox reactions
Selenium compounds
Semiconductor quantum wells
Electronic.structure
First principle calculations
First principles
First-principles investigations
Gase/MoS2
Photo-catalytic
Photocatalytic character
Photocatalytic property
Structure property
Two-dimensional
Strain effects on the behavior of intrinsic point defects within the GaN/AlN interface
期刊论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS C, 2022
作者:
Yang, Yuming
;
Zhang, Xuemei
;
Liu, Jun
;
Zhang, Chuanguo
;
Li, Yonggang
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2022/12/23
GaN
AlN interface
strain effects
intrinsic point defects
first-principles calculations
diffusion barrier
Effect of transition metals doping on electronic structure and optical properties of β-Ga2O3
期刊论文
Materials Research Express, 2021, 卷号: 8, 期号: 2
作者:
Gao, Shanshan
;
Li, Weixue
;
Dai, Jianfeng
;
Wang, Qing
;
Suo, Zhongqiang
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2021/04/12
Atoms
D region
Electronic structure
Gallium compounds
Red Shift
Transition metals
Absorption intensity
Atomic numbers
Cu-doping
Electronic structure and optical properties
Orbital hybridization
Strong interaction
Visible light
Zn doping
Magnetic phase transition and room-temperature magnetocaloric effects in (Al,M)Fe2B2 (M=Si, Ga) compounds
期刊论文
Journal of Magnetism and Magnetic Materials, 2019, 卷号: 484, 页码: 154-158
作者:
Zhang, Zhihao
;
Yao, Guiquan
;
Zhang, Lu
;
Jia, Peng
;
Fu, Xiaoxiao
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2020/11/14
Costs
Gallium compounds
Magnetic refrigeration
Refrigeration
Silicon compounds
Transition metals
Entropy changes
Field change
Ga substitutions
Magnetic phase transitions
Second orders
Single phase
Substitution composition
Substitution effect
Hydrogen generation by hydrolysis of Al-Ga-Mg-Sn multi-element aluminum alloy
期刊论文
Zhongguo Youse Jinshu Xuebao/Chinese Journal of Nonferrous Metals, 2019, 卷号: 29, 期号: 3, 页码: 598-605
作者:
Zhang, Jian-Bin
;
Liu, Zhi-Dong
;
Yao, Bing-Nan
;
Wei, Mei
;
Li, Qing-Lin
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2020/11/14
Aluminum compounds
Binary alloys
Gallium alloys
Hydrogen production
Hydrolysis
Magnesium alloys
Matrix algebra
Melting point
Phase composition
Scanning electron microscopy
Silicon alloys
Temperature
Tin alloys
Arrhenius formula
Crucible resistance
Hydrogen generations
Hydrogen yields
Low melting point
Optical microscopes
Performance tests
Thermodynamic temperature
Selective Recovery of Gallium (Indium) from Metal Organic Chemical Vapor Deposition Dust-A Sustainable Process
期刊论文
ACS SUSTAINABLE CHEMISTRY & ENGINEERING, 2019, 卷号: 7, 期号: 10, 页码: 9646, 9654
作者:
Fang, S
;
Tao, TY
;
Cao, HB
;
Zheng, XH
;
Hu, YY
收藏
  |  
浏览/下载:53/0
  |  
提交时间:2019/06/14
Ga-bearing dust
LITHIUM-ION BATTERY
Metal recycling
ELECTRONIC WASTE
Selective leaching
CATHODE SCRAP
Precipitation
LED INDUSTRY
POWER DEVICE
RED MUD
ZINC
GAN
EXTRACTION
SEPARATION
Preparation of high-quality CuGa2O4 film via annealing process of Cu/beta-Ga2O3
期刊论文
JOURNAL OF MATERIALS SCIENCE, 2019, 卷号: 54, 页码: 11111-11116
作者:
Shi, Jianjun
;
Liang, Hongwei
;
Xia, Xiaochuan
;
Li, Zhuo
;
Long, Ze
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2019/12/02
Copper
Copper compounds
Crystallinity
Film preparation
Lattice mismatch
Metallic films
Semiconductor quantum wells
Single crystals
X ray diffraction analysis, Annealing methods
Annealing process
Epitaxial relationships
Full width half maximum
High resolution X ray diffraction
Preferred orientations
Single crystal substrates
[110] direction, Gallium compounds
Deformation patterns and fracture stress of beta-phase gallium oxide single crystal obtained using compression of micro-pillars
期刊论文
JOURNAL OF MATERIALS SCIENCE, 2019, 卷号: 54, 页码: 1958-1966
作者:
Wu, Y. Q.
;
Gao, S.
;
Kang, R. K.
;
Huang, H.
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/02
Deformation
Fracture
High resolution transmission electron microscopy
Single crystals
Transmission electron microscopy, Compressive strain
Deformation defects
Deformation pattern
Fracture stress
Gallium oxides
Lattice bending
Lattice plane
Micro Pillars, Gallium compounds
Catalyst-free growth of single crystalline beta-Ga2O3 microbelts on patterned sapphire substrates
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2019, 卷号: 509, 页码: 91-95
作者:
Feng, Qiuju
;
Li, Tongtong
;
Li, Fang
;
Li, Yunzheng
;
Shi, Bo
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2019/12/02
Low dimensional structures
Characterization
Chemical vapor deposition processes
Semiconducting gallium compounds
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