×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
大连理工大学 [12]
半导体研究所 [6]
上海光学精密机械研究... [2]
金属研究所 [1]
中国医学科学院 北京... [1]
上海硅酸盐研究所 [1]
更多...
内容类型
期刊论文 [20]
会议论文 [3]
发表日期
2019 [3]
2018 [5]
2017 [2]
2016 [5]
2015 [1]
2011 [5]
更多...
学科主题
光学薄膜 [2]
半导体材料 [2]
半导体器件 [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共23条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
发表日期升序
发表日期降序
提交时间升序
提交时间降序
题名升序
题名降序
作者升序
作者降序
Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure
期刊论文
ELECTRONICS, 2019, 卷号: 8
作者:
Huang, Huolin
;
Li, Feiyu
;
Sun, Zhonghao
;
Sun, Nan
;
Zhang, Feng
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2019/12/02
vertical field-effect transistor (VFET)
back current blocking layer (BCBL)
gallium nitride (GaN)
normally off power devices
Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme
期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2019, 卷号: 108, 页码: 197-201
作者:
Huang, Huolin
;
Sun, Zhonghao
;
Zhang, Feng
;
Li, Feiyu
;
Cao, Yaqing
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2019/12/02
Ohmic contacts
Modeling process
Semiconductor devices
Gallium nitride
Gallium Nitride Normally-Off Vertical Field-Effect Transistor Featuring an Additional Back Current Blocking Layer Structure
期刊论文
Electronics, 2019, 卷号: 8, 页码: 241
作者:
Huolin Huang
;
Feiyu Li
;
Zhonghao Sun
;
Nan Sun
;
Feng Zhang
;
Yaqing Cao
;
Hui Zhang Pengcheng Tao
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2020/07/30
Investigation of surface traps-induced current collapse phenomenon in AlGaN/ GaN high electron mobility transistors with schottky gate structures
期刊论文
Journal of Physics D: Applied Physics, 2018, 卷号: 51, 期号: 34, 页码: 345102
作者:
Huang Huolin
;
Sun Zhonghao
;
Cao Yaqing
;
Li Feiyu
;
Zhang Feng
;
Wen Zhengxin
;
Zhang Zifeng
;
Liang Yung C.
;
Hu Lizhong
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2019/11/15
Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices
期刊论文
MICROMACHINES, 2018, 卷号: 9
作者:
Huang, Huolin
;
Li, Feiyu
;
Sun, Zhonghao
;
Cao, Yaqing
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/12/02
threshold voltage (V-th) stability
gallium nitride (GaN)
high electron mobility transistors (HEMTs)
analytical model
high-temperature operation
Investigation of surface traps-induced current collapse phenomenon in AlGaN/GaN high electron mobility transistors with schottky gate structures
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2018, 卷号: 51
作者:
Huang, Huolin
;
Sun, Zhonghao
;
Cao, Yaqing
;
Li, Feiyu
;
Zhang, Feng
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/02
gallium nitride (GaN)
semiconductor devices
surface donor-like traps
current collapse
Obtaining Exact Electrical Parameters in Semiconductor Ohmic Contacts Using a Novel Electrode Pair Layout Design
会议论文
2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018-01-01
作者:
Huang, Huolin
;
Sun, Zhonghao
;
Cao, Yaqing
;
Li, Feiyu
;
Hu, Lizhong
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/12/02
Electrode Pair (EP)
Ohmic contact
IC design
Modelling
The Double Burdens of Mental Health Among AIDS Patients With Fully Successful Immune Restoration: A Cross-Sectional Study of Anxiety and Depression in China
期刊论文
2018, 卷号: 9, 页码: 384
作者:
Huang Xiaojie
;
Meyers Kathrine
;
Liu Xinchao
;
Li Xia
;
Zhang Tong
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2020/01/03
HIV-1
Hospital Anxiety and Depression (HAD) scale
anxiety
depression
mental health
prevalence
risk factors
Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD
期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 卷号: 60, 页码: 66-70
作者:
Liu, Jianxun
;
Liang, Hongwei
;
Liu, Yang
;
Xia, Xiaochuan
;
Huang, Huolin
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2019/12/02
GaN
InGaN interlayer
Strain
Microstructure
Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer
期刊论文
JOURNAL OF PHYSICAL CHEMISTRY C, 2017, 卷号: 121, 页码: 18095-18101
作者:
Liu, Jianxun
;
Liang, Hongwei
;
Zheng, Xiantong
;
Liu, Yang
;
Xia, Xiaochuan
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/09
©版权所有 ©2017 CSpace - Powered by
CSpace