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	Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme
	Huang, Huolin; Sun, Zhonghao; Zhang, Feng; Li, Feiyu; Cao, Yaqing; Cai, Yong; Zhang, Baoshun
刊名	PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
	2019
卷号	108页码:197-201
关键词	Ohmic contacts Modeling process Semiconductor devices Gallium nitride
ISSN号	1386-9477
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3221305
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China. 2.Dalian Univ Technol, Key Lab Micro Nano Technol & Syst Liaoning Prov, Dalian 116024, Peoples R China. 3.Dalian Univ Technol, Sch Optoelect Engn & Instrumentat Sci, Dalian 116024, Peoples R China. 4.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China.,Chinese Acad Sci, Beijing Key Lab Low Dimens Semicond Mat & Devices, Inst Semicond, Beijing 100083, Peoples R China. 5.Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China.
推荐引用方式 GB/T 7714	Huang, Huolin,Sun, Zhonghao,Zhang, Feng,et al. Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2019,108:197-201.
APA	Huang, Huolin.,Sun, Zhonghao.,Zhang, Feng.,Li, Feiyu.,Cao, Yaqing.,...&Zhang, Baoshun.(2019).Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,108,197-201.
MLA	Huang, Huolin,et al."Analytical model for accurate extraction of metal-semiconductor ohmic contact parameters using a novel electrode-pair layout scheme".PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 108(2019):197-201.

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