中国开放科研知识云: 检索

Physical properties of liquid crystals doped with CsPbBr3 quantum dots 期刊论文
LIQUID CRYSTALS, 2021
作者: Liu, Xuelian; Xia, Xiang; Yang, Le; Zhu, Jun; Xu, Miao

收藏 | 浏览/下载：31/0 | 提交时间：2021/03/15

Nematic liquid crystal CsPbBr3 SiO2 perovskite quantum dots alignment threshold voltage (V-th)

Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices 期刊论文
MICROMACHINES, 2018, 卷号: 9
作者: Huang, Huolin; Li, Feiyu; Sun, Zhonghao; Cao, Yaqing

收藏 | 浏览/下载：7/0 | 提交时间：2019/12/02

threshold voltage (V-th) stability gallium nitride (GaN) high electron mobility transistors (HEMTs) analytical model high-temperature operation

Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 卷号: 63, 期号: 2
作者: Shi, YJ; Huang, S; Bao, QL; Wang, XH; Wei, K

收藏 | 浏览/下载：43/0 | 提交时间：2017/03/11

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate 期刊论文
SCIENTIFIC REPORTS, 2016
Han, Dedong; Zhang, Yi; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

收藏 | 浏览/下载：2/0 | 提交时间：2017/12/03

PERFORMANCE STABILITY

High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016
Han, Dedong; Chen, Zhuofa; Cong, Yingying; Yu, Wen; Zhang, Xing; Wang, Yi

收藏 | 浏览/下载：4/0 | 提交时间：2017/12/04

Flexible high performance tin-zinc-oxide (TZO) thin film transistor (TFT) A-IGZO TFTS GLASS SUBSTRATE MOBILITY

Performance and Stability Improvements of Back-Channel-Etched Amorphous Indium-Gallium-Zinc Thin-Film-Transistors by CF4+O-2 Plasma Treatment 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2015
Liu, Xiang; Wang, Lisa Ling; Hu, Hehe; Lu, Xinhong; Wang, Ke; Wang, Gang; Zhang, Shengdong

收藏 | 浏览/下载：3/0 | 提交时间：2017/12/03

a-IGZO TFTs back-channel-etch (BCE) plasma treatment threshold voltage shift THRESHOLD VOLTAGE SHIFT OXIDE GATE

Thin-Film Transistor V-th Shift Model Based on Kinetics of Electron Transfer in Gate Dielectric 期刊论文
ieee电子器件汇刊, 2014
Wang, Lisa Ling; Liu, Tony Chi; Cai, Yuying; Zhang, Shengdong

收藏 | 浏览/下载：5/0 | 提交时间：2015/11/11

Charge trapping electron transfer Poole-Frenkel (PF) conduction threshold voltage shift trap-assisted tunnel CONDUCTION STABILITY

Stablity research and application of amorphous indium gallium zinc oxide tfts for active matrix organic light-emitting diode display 其他
2014-01-01
Zhao, Feilong; Han, Dedong; Dong, Junchen; Wang, Longyan; Zhao, Nannan; Cong, Yingying; Chen, Zhuofa; Zhang, Xing; Zhang, Shengdong; Wang, Yi

收藏 | 浏览/下载：5/0 | 提交时间：2015/11/13

NBTI-aware dual V/sub th/ assignment for leakage reduction and lifetime assurance 期刊论文
2010, 2010
Wang Yu; Luo Hong; He Ku; Luo Rong; Yang Huazhong; Xie Yuan

收藏 | 浏览/下载：2/0

Fabrication and electron emission of carbon microtubes (EI CONFERENCE) 会议论文
Technical Digest of the 18th International Vacuum Nanoelectronics Conference, IVNC 2005, July 10, 2005 - July 14, 2005, Oxford, United kingdom
Wang W.; Xia Y.; Lei D.; Chen S.; Liu L.; Chen M.; Liang J.

收藏 | 浏览/下载：29/0 | 提交时间：2013/03/25

Carbon nanotubes have been attracting attention because of their unique physical properties and their application potential for field emission cathode. Carbon nanotubes possess the following properties favorable for field emission material such as a high aspect ratio and sharp tip high chemical stability high mechanical strength stable at high temperature. Some research works on carbon nanotubes field emitter and field emission display have been reported. Here a kind of carbon microtubes and its field emission properties are introduced. They have some different properties with carbon nanotubes and the density is lower than carbon nanotubes bundles. These carbon microtubes are directly synthesized by liquidoid epitaxy method on silicon substrates at low temperature. The field emission properties of carbon microtubes are reported too. Carbon microtubes film is synthesized in liquid by electrolysis. The graphite plate is as anode and n-silicon substrate with resistivity of 4-8 cm is as cathode. The electrolysis current is about 5-8mA/cm2 and applied voltage is 800-1500V. Temperatures of the methanol base solution is maintained at 60C in process of deposition of carbon microtubes. Carbon microtubes film is observed by scanning electron microscopy(SEM) as shown in fig.1(a b). The wall's thickness of carbon microtube is about 60nm. The diameter of carbon microtube is about 0.8 m. Raman spectrum of carbon microtubes film shows the two peaks at 1342and 1560cm-1. The field emission properties of carbon microtubes are measured in high vacuum chamber(10-5Pa). The emission area of carbon microtubes is 0.5cm 0.5cm. The threshold of field emission of the carbon microtubes film is about 3.6V/ m. Field emission property of carbon microtubes film is shown in fig.2. Another when the electric field between anode and cathode is 10V/ m the electric field distribution on single carbon microtube is also given after calculation according to electric field theory. Fig 3 shows that electric field distribution vertical section on the of single carbon microtube top with 2 m of highness. These results may help us to understand field emission properties of carbon microtubes. According to research results it is found that liquidoid synthesis is simple method to produce carbon microtubes cold cathode material and the carbon microtubes have better field emission properties. 2005 IEEE.

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