Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy

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	Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy
	Huan, Ya-Wei; Wang, Xing-Lu; Liu, Wen-Jun; Dong, Hong; Long, Shi-Bing; Sun, Shun-Ming; Yang, Jian-Guo; Wu, Su-Dong; Yu, Wen-Jie; Horng, Ray-Hua
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2018
卷号	57 期号:10
关键词	Beta-ga2o3 Single-crystals Ohmic Contacts Offsets Heterostructures Valence Growth Edge
英文摘要	The energy band offsets between indium-gallium-zinc oxide (IGZO) and beta-Ga2O3 were examined by angle-resolved X-ray photoelectron spectroscopy (AR-XPS). The Ga 2p spectra from the heterojunction contributed by the upper IGZO film and the beta-Ga2O3 substrate were deconvoluted into two sub-peaks with the binding energy difference of 0.3 eV, in good agreement with the theoretical model. Meanwhile, the bandgaps of IGZO and beta-Ga2O3 were measured to be 3.44 +/- 0.1 and 4.64 +/- 0.1 eV from the ultraviolet-visible (UV-vis) transmittance spectra. The valence and conduction band offsets between the IGZO and beta-Ga2O3 were consequently determined to be 0.49 +/- 0.05 and 0.71 +/- 0.1 eV, respectively. These findings reveal that IGZO is an attractive intermediate semiconductor layer (ISL) for reducing the electron barrier height at metal/Ga2O3 interfaces. (C) 2018 The Japan Society of Applied Physics
学科主题	Physics
语种	英语
公开日期	2018-12-04
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/17153]
专题	2018专题
推荐引用方式 GB/T 7714	Huan, Ya-Wei,Wang, Xing-Lu,Liu, Wen-Jun,et al. Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2018,57(10).
APA	Huan, Ya-Wei.,Wang, Xing-Lu.,Liu, Wen-Jun.,Dong, Hong.,Long, Shi-Bing.,...&Zhang, David Wei.(2018).Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy.JAPANESE JOURNAL OF APPLIED PHYSICS,57(10).
MLA	Huan, Ya-Wei,et al."Band alignment of indium-gallium-zinc oxide/beta-Ga2O3((2)over-bar01) heterojunction determined by angle-resolved X-ray photoelectron spectroscopy".JAPANESE JOURNAL OF APPLIED PHYSICS 57.10(2018).