| Low resistivity ohmic contacts on lightly doped n-type -Ga2O3 using Mg/Au | |
| Shi, Jianjun; Xia, Xiaochuan; Liang, Hongwei; Abbas, Qasim; Liu, Jun; Zhang, Heqiu; Liu, Yang | |
| 刊名 | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
 |
| 2019 | |
| 卷号 | 30页码:3860-3864 |
| 关键词 | Electric contactors Electrodes Gallium compounds Ohmic contacts, Annealed samples Annealing temperatures Contact electrodes Contact mechanism Specific contact resistances Surface profiles Transmission-line measurements Voltage characteristics, Annealing |
| ISSN号 | 0957-4522 |
| URL标识 | 查看原文 |
| WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/3220443 |
| 专题 | 大连理工大学 |
| 作者单位 | Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Shi, Jianjun,Xia, Xiaochuan,Liang, Hongwei,et al. Low resistivity ohmic contacts on lightly doped n-type -Ga2O3 using Mg/Au[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2019,30:3860-3864. |
| APA | Shi, Jianjun.,Xia, Xiaochuan.,Liang, Hongwei.,Abbas, Qasim.,Liu, Jun.,...&Liu, Yang.(2019).Low resistivity ohmic contacts on lightly doped n-type -Ga2O3 using Mg/Au.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,30,3860-3864. |
| MLA | Shi, Jianjun,et al."Low resistivity ohmic contacts on lightly doped n-type -Ga2O3 using Mg/Au".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 30(2019):3860-3864. |
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