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CORC

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Impact of High TID Irradiation on Stability of 65 nm SRAM Cells 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 卷号: 69, 期号: 5, 页码: 1044-1050
作者:  Cui, JW (Cui, Jiangwei) [1];  Zheng, QW (Zheng, Qiwen) [1];  Li, YD (Li, Yudong) [1];  Guo, Q (Guo, Qi) [1]
收藏  |  浏览/下载：17/0  |  提交时间：2022/06/21
Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC mitigation strategies 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2021, 卷号: 32, 期号: 12, 页码: 13
作者:  He, Ze;  Zhao, Shi-Wei;  Liu, Tian-Qi;  Cai, Chang;  Yan, Xiao-Yu
收藏  |  浏览/下载：64/0  |  提交时间：2022/01/12
Design, Application, and Verification of the Novel SEU Tolerant Abacus-Type Layouts 期刊论文
ELECTRONICS, 2021, 卷号: 10, 期号: 23, 页码: 11
作者:  Sun, Yi;  Li, Zhi;  He, Ze;  Chi, Yaqing
收藏  |  浏览/下载：11/0  |  提交时间：2022/04/11
Heavy ion track straggling effect in single event effect numerical simulation of 3D stacked devices 期刊论文
MICROELECTRONICS RELIABILITY, 2020, 卷号: 114, 页码: 10
作者:  Liu, T. Q.;  Li, D. Q.;  Cai, C.;  Zhao, P. X.;  Shen, C.
收藏  |  浏览/下载：9/0  |  提交时间：2021/12/13
SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 页码: 6
作者:  Cai, C.;  Zhao, P. X.;  Xu, L. W.;  Liu, T. Q.;  Li, D. Q.
收藏  |  浏览/下载：16/0  |  提交时间：2022/01/19
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载：74/0  |  提交时间：2019/11/10
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文
Geneva, SWITZERLAND, OCT 02-06, 2017
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载：38/0  |  提交时间：2018/10/08
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
作者:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa)
收藏  |  浏览/下载：48/0  |  提交时间：2018/05/15
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ]
收藏  |  浏览/下载：53/0  |  提交时间：2018/09/27
Simulation of Parasitic Bipolar Transistor Effect in Nanometric SRAM 期刊论文
Tien Tzu Hsueh Pao/Acta Electronica Sinica, 2018, 卷号: 46, 页码: 2495-2503
作者:  Zhao, Wen;  Guo, Xiao-Qiang;  Chen, Wei;  Luo, Yin-Hong;  Wang, Han-Ning
收藏  |  浏览/下载：3/0  |  提交时间：2019/11/26

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