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CORC

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Impact of High TID Irradiation on Stability of 65 nm SRAM Cells 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 卷号: 69, 期号: 5, 页码: 1044-1050
作者:  Cui, JW (Cui, Jiangwei) [1];  Zheng, QW (Zheng, Qiwen) [1];  Li, YD (Li, Yudong) [1];  Guo, Q (Guo, Qi) [1]
收藏  |  浏览/下载：17/0  |  提交时间：2022/06/21
Design, Application, and Verification of the Novel SEU Tolerant Abacus-Type Layouts 期刊论文
ELECTRONICS, 2021, 卷号: 10, 期号: 23, 页码: 11
作者:  Sun, Yi;  Li, Zhi;  He, Ze;  Chi, Yaqing
收藏  |  浏览/下载：11/0  |  提交时间：2022/04/11
Bulkyflip: A NAND-SPIN-Based Last-Level Cache With Bandwidth-Oriented Write Management Policy 期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2020, 卷号: 67, 期号: 1, 页码: 108-120
作者:  Wu, Bi;  Dai, Pengcheng;  Wang, Zhaohao;  Wang, Chao;  Wang, Ying
收藏  |  浏览/下载：16/0  |  提交时间：2020/12/10
Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs 期刊论文
ELECTRONICS, 2019, 卷号: 8, 期号: 3, 页码: 13
作者:  Ke, Lingyun;  Zhao, Peixiong;  Liu, Jie;  Fan, Xue;  Cai, Chang
收藏  |  浏览/下载：108/0  |  提交时间：2019/11/10
Correlation between the Decoupling Capacitor Layouts and Single-Event-Upset Resistances of SRAM cells 会议论文
作者:  Zhentao Li;  Zheng ZS(郑中山);  Zhao K(赵凯);  Li B(李博);  Luo JJ(罗家俊)
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/13
Characteristics of Single Event Upsets induced by Heavy Ions in 28nm UTBB-FDSOI SRAM with Several Types of Radiation Harden Bit-cells 会议论文
作者:  Bo Mei;  Qingkui Yu;  Yong Ge;  Yi Sun;  Hongwei Zhang
收藏  |  浏览/下载：19/0  |  提交时间：2019/05/10
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
作者:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa)
收藏  |  浏览/下载：48/0  |  提交时间：2018/05/15
Roles of the Gate Length and Width of the Transistors in Increasing the Single Event Upset Resistance of SRAM cells 会议论文
作者:  Han ZS(韩郑生);  Luo JJ(罗家俊);  Zheng ZS(郑中山)
收藏  |  浏览/下载：6/0  |  提交时间：2018/07/20
Comparison of Decoupling Resistors and Capacitors for Increasing the Single Event Upset Resistance of SRAM Cells 会议论文
作者:  Zheng ZS(郑中山)
收藏  |  浏览/下载：8/0  |  提交时间：2016/06/15
Correction of Single Event Latchup Rate Prediction Using Pulsed Laser Mapping Test 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2015, 卷号: 62, 期号: 2, 页码: 565-570
作者:  Yu, Y. -T.;  Han, J. -W.;  Feng, G. -Q.;  Cai, M. -H.;  Chen, R.
收藏  |  浏览/下载：17/0  |  提交时间：2015/09/28

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