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新疆理化技术研究所 [13]
中国农业科学院 [2]
近代物理研究所 [2]
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期刊论文 [16]
会议论文 [1]
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Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:
Zheng, QW (Zheng, Qiwen) 1
;
Cui, JW (Cui, Jiangwei) 1
;
Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2021/08/06
Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:
Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1
;
Li, YD (Li, Yudong) 1
;
Lu, W (Lu, Wu) 1
;
He, CF (He, Chengfa) 1
;
Guo, Q (Guo, Qi) 1
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2021/12/06
Threshold voltage
TestingMOSFET circuits
Transistors
Standards
Logic gates
Fluctuations
Buried oxide (BOX)
silicon-on-insulator (SOI)
total ionizing dose (TID)
Optically stimulated luminescence of Dy3+-doped NaCaPO4 glass-ceramics
期刊论文
JOURNAL OF RARE EARTHS, 2020, 卷号: 38, 期号: 9, 页码: 927-932
作者:
Xu, J (Xu, Jie)[ 1,2 ]
;
Chen, ZY (Chen, Zhaoyang)[ 1 ]
;
Gai, MQ (Gai, Minqiang)[ 1 ]
;
Fan, YW (Fan, Yanwei)[ 1 ]
;
He, CF (He, Chengfa)[ 3 ]
收藏
  |  
浏览/下载:74/0
  |  
提交时间:2020/09/09
Optically stimulated luminescence
Glass-ceramics
Radiation measurements
Photoluminescence
Rare earths
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:
Zheng, Qiwen
;
Cui, Jiangwei
;
Lu, Wu
;
Guo, Hongxia
;
Liu, Jie
收藏
  |  
浏览/下载:74/0
  |  
提交时间:2019/11/10
Single-event multiple-cell upsets (MCUs)
static random access memory
total ionizing dose (TID)
Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139
期刊论文
JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, 2019, 卷号: 56, 期号: 2, 页码: 172-178
作者:
Yao, S (Yao, Shuai)[ 1,2,3 ]
;
Lu, W (Lu, Wu)[ 1,2,4 ]
;
Yu, X (Yu, Xin)[ 1,2 ]
;
Wang, X (Wang, Xin)[ 1,2 ]
;
Li, XL (Li, Xiaolong)[ 1,2,3 ]
收藏
  |  
浏览/下载:81/0
  |  
提交时间:2019/02/25
Enhanced low dose rate sensitivity
single event transient
bipolar voltage comparator
synergistic effect
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:
Zheng, QW (Zheng, Qiwen)[ 1 ]
;
Cui, JW (Cui, Jiangwei)[ 1 ]
;
Xu, LW (Xu, Liewei)[ 2 ]
;
Ning, BX (Ning, Bingxu)[ 3 ]
;
Zhao, K (Zhao, Kai)[ 3 ]
收藏
  |  
浏览/下载:98/0
  |  
提交时间:2019/05/14
Back-gate biasing
forward body bias (FBB)
total ionizing dose (TID)
ultrathin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI)
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose
会议论文
Geneva, SWITZERLAND, OCT 02-06, 2017
作者:
Zheng, Qiwen
;
Cui, Jiangwei
;
Lu, Wu
;
Guo, Hongxia
;
Liu, Jie
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2018/10/08
Charge sharing
single-event upset (SEU)
static random access memory
total ionizing dose (TID)
Effects of recording time and residue on dose-response by LiMgPO4: Tb, B ceramic disc synthesized via improved sintering process
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2018, 卷号: 422, 期号: 5, 页码: 2018-12-17
作者:
Kong, XR (Kong, Xirui)
;
Fu, ZL (Fu, Zhilong)
;
Que, HY (Que, Huiying)
;
Fan, YW (Fan, Yanwei)
;
Chen, ZY (Chen, Zhaoyang)
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2018/07/20
Limgpo4
Ceramic Disc
Tb
Osl
b
Recording Time
Bleaching Time
Total-ionizing Dose Effects
Using temperature-switching approach to evaluate the ELDRS of bipolar devices
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2018, 卷号: 172, 期号: 11-12, 页码: 824-834
作者:
Li, XL (Li, Xiaolong)
;
Lu, W (Lu, Wu)
;
Wang, X (Wang, Xin)
;
Guo, Q (Guo, Qi)
;
Yu, X (Yu, Xin)
收藏
  |  
浏览/下载:29/0
  |  
提交时间:2018/07/24
Bipolar Technology
Co-60 Gamma Irradiation
Enhanced Low-dose Rate Sensitivity (Eldrs)
Temperature-switching Approach (Tsa)
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
作者:
Zheng, QW (Zheng, Qiwen)
;
Cui, JW (Cui, Jiangwei)
;
Yu, XF (Yu, Xuefeng)
;
Lu, W (Lu, Wu)
;
He, CF (He, Chengfa)
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2018/05/15
Static Noise Margin (Snm)
Static Random Access Memory (Sram)
Total Ionizing Dose (Tid)
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