CORC

在结果中检索

CORC

浏览/检索结果: 共49条，第1-10条 帮助

已选(0)清除 条数/页：   排序方式：
1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214
作者:  Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3];  Zheng, QW (Zheng, Qiwen) [1] , [2];  Lu, W (Lu, Wu) [1] , [2];  Cui, JW (Cui, Jiangwei) [1] , [2];  Li, YD (Li, Yudong) [1] , [2]
收藏  |  浏览/下载：18/0  |  提交时间：2022/04/07
Impact of High TID Irradiation on Stability of 65 nm SRAM Cells 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 卷号: 69, 期号: 5, 页码: 1044-1050
作者:  Cui, JW (Cui, Jiangwei) [1];  Zheng, QW (Zheng, Qiwen) [1];  Li, YD (Li, Yudong) [1];  Guo, Q (Guo, Qi) [1]
收藏  |  浏览/下载：17/0  |  提交时间：2022/06/21
Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429
作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1
收藏  |  浏览/下载：37/0  |  提交时间：2021/08/06
Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523
作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1
收藏  |  浏览/下载：38/0  |  提交时间：2021/12/06
Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566
作者:  Liang, XW (Liang, Xiaowen)[ 1,2,3 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Yu, XF (Yu, Xuefeng)[ 1,2 ]
收藏  |  浏览/下载：36/0  |  提交时间：2020/12/11
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载：73/0  |  提交时间：2019/11/10
Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 4, 页码: 702-709
作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Xu, LW (Xu, Liewei)[ 2 ];  Ning, BX (Ning, Bingxu)[ 3 ];  Zhao, K (Zhao, Kai)[ 3 ]
收藏  |  浏览/下载：98/0  |  提交时间：2019/05/14
A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs 期刊论文
RESULTS IN PHYSICS, 2019, 卷号: 13, 期号: 6, 页码: 1-5
作者:  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zhou, H (Zhou, Hang)[ 1,2,3 ];  Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
收藏  |  浏览/下载：29/0  |  提交时间：2020/03/20
Strain tunable ionic transport properties and electrochemical window of Li10GeP2S12 superionic conductor 期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2018, 卷号: 153, 页码: 170-175
作者:  Chen, Bingbing;  Ju, Jiangwei;  Ma, Jun;  Du, Huiping;  Xiao, Ruijuan
收藏  |  浏览/下载：57/0  |  提交时间：2018/12/21
Total Ionizing Dose Characterization of a SRAM in 28nm UTBB FDSOI Technology 会议论文
作者:  Qiwen Zheng;  mengxin Liu;  Jiangwei Cui;  Shanxue Xi;  Ying Wei
收藏  |  浏览/下载：32/0  |  提交时间：2019/05/10

©版权所有 ©2017 CSpace - Powered by CSpace