Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology | |
Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1; Li, YD (Li, Yudong) 1; Lu, W (Lu, Wu) 1; He, CF (He, Chengfa) 1; Guo, Q (Guo, Qi) 1 | |
刊名 | IEEE TRANSACTIONS ON NUCLEAR SCIENCE |
2021 | |
卷号 | 68期号:10页码:2516-2523 |
关键词 | Threshold voltage TestingMOSFET circuits Transistors Standards Logic gates Fluctuations Buried oxide (BOX) silicon-on-insulator (SOI) total ionizing dose (TID) |
ISSN号 | 0018-9499 |
DOI | 10.1109/TNS.2021.3111111 |
英文摘要 | Within-wafer total ionizing dose (TID) response variability on buried oxide (BOX) layer of silicon-on-insulator (SOI) technology is investigated in this article. TID response variability is measured by the threshold voltage and OFF-state leakage of transistors evenly distributed on the wafer locations. Experimental results show the larger standard deviation of threshold voltage and OFF-state leakage distribution for irradiated devices than unirradiated devices, illustrating the within-wafer TID response variability. The hole traps variation in the BOX layer is responsible for the within-wafer TID response variability of SOI technology. Moreover, a data analysis method according to T-distribution is proposed to obtain the within-wafer TID response variability by the sampling testing results of limited wafer locations. Our data show that the T-distribution method is reasonable to assess the TID-induced variability of a process when only a few samples are available. |
WOS记录号 | WOS:000709072100014 |
内容类型 | 期刊论文 |
源URL | [http://ir.xjipc.cas.cn/handle/365002/8112] |
专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 |
作者单位 | Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China |
推荐引用方式 GB/T 7714 | Zheng, QW ,Li, YD ,Lu, W ,et al. Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE,2021,68(10):2516-2523. |
APA | Zheng, QW ,Li, YD ,Lu, W ,He, CF ,&Guo, Q .(2021).Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology.IEEE TRANSACTIONS ON NUCLEAR SCIENCE,68(10),2516-2523. |
MLA | Zheng, QW ,et al."Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology".IEEE TRANSACTIONS ON NUCLEAR SCIENCE 68.10(2021):2516-2523. |
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