Heavy ion track straggling effect in single event effect numerical simulation of 3D stacked devices

doi:10.1016/j.microrel.2020.113853

	Heavy ion track straggling effect in single event effect numerical simulation of 3D stacked devices
	Liu, T. Q.1,5; Li, D. Q.3,4; Cai, C.3,4; Zhao, P. X.3,4; Shen, C.2; Liu, J.4; Yang, G. W.1,5
刊名	MICROELECTRONICS RELIABILITY
	2020-11-01
卷号	114 页码:10
ISSN号	0026-2714
DOI	10.1016/j.microrel.2020.113853
通讯作者	Liu, J.(j.liu@impcas.ac.cn) ; Yang, G. W.(ygw@tsinghua.edu.cn)
英文摘要	Numerical simulation of single event effect in 3D stacked NMOS transistor, inverter and 6T SRAM cell models were conducted using Geant4 and TCAD combined technology. Heavy ion track straggling effect was observed in 3D stacked transistor and inverter models by comparing the ion induced transient pulses and ion striking positions. TRIM simulation was carried out to study and verify the ion track straggling effect in 3D stacked models, which is much more significant for low energy heavy ions than high energy counterparts. Large scale simulation of upset sensitive area imaging in stacked 6T SRAM cell model showed that the upset areas (or cross sections) in each tier are very similar. It indicated that high energy heavy ions are beneficial to the SEE analysis of 3D stacked devices and almost can remove the ion track straggling effect, but which is only appropriate for the relatively thin devices. Finally, the problems on SEE evaluation and analysis in future 3D stacked devices were further discussed.
资助项目	National Natural Science Foundation of China[11805244] ; National Natural Science Foundation of China[61672312] ; National Natural Science Foundation of China[11690041] ; National Natural Science Foundation of China[11675233]
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Physics
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000593889100013
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/138438]
专题	中国科学院近代物理研究所
通讯作者	Liu, J.; Yang, G. W.
作者单位	1.Tsinghua Univ, Dept Comp Sci & Technol, Beijing 100084, Peoples R China 2.Cogenda Co Ltd, Suzhou 800015, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 4.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 5.Natl Supercomp Ctr Wuxi, Wuxi 214000, Jiangsu, Peoples R China
推荐引用方式 GB/T 7714	Liu, T. Q.,Li, D. Q.,Cai, C.,et al. Heavy ion track straggling effect in single event effect numerical simulation of 3D stacked devices[J]. MICROELECTRONICS RELIABILITY,2020,114:10.
APA	Liu, T. Q..,Li, D. Q..,Cai, C..,Zhao, P. X..,Shen, C..,...&Yang, G. W..(2020).Heavy ion track straggling effect in single event effect numerical simulation of 3D stacked devices.MICROELECTRONICS RELIABILITY,114,10.
MLA	Liu, T. Q.,et al."Heavy ion track straggling effect in single event effect numerical simulation of 3D stacked devices".MICROELECTRONICS RELIABILITY 114(2020):10.