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浏览/检索结果: 共4条，第1-4条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Studies on the design and properties of FeCrVTix medium-entropy alloys for potential nuclear applications 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2022, 卷号: 894, 页码: 14 作者:  Cui, Jinghao;  Cheng, Zhaoyi;  Chen, Da;  Wang, Tao;  Zhang, Linqi 收藏  |  浏览/下载：72/0  |  提交时间：2021/12/13 Medium-entropy alloy  Design of alloys  BCC structure  Laves phase  Candidate nuclear materials   Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET 期刊论文 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566 作者:  Liang, XW (Liang, Xiaowen)[ 1,2,3 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Yu, XF (Yu, Xuefeng)[ 1,2 ] 收藏  |  浏览/下载：37/0  |  提交时间：2020/12/11 SiC MOSFET  total ionizing dose irradiation  time-dependent dielectric breakdown   A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs 期刊论文 RESULTS IN PHYSICS, 2019, 卷号: 13, 期号: 6, 页码: 1-5 作者:  Zhao, JH (Zhao, Jinghao)[ 1,2,3 ];  Zheng, QW (Zheng, Qiwen)[ 1,2 ];  Cui, JW (Cui, Jiangwei)[ 1,2 ];  Zhou, H (Zhou, Hang)[ 1,2,3 ];  Liang, XW (Liang, Xiaowen)[ 1,2,3 ] 收藏  |  浏览/下载：29/0  |  提交时间：2020/03/20 Hot carrier effect  PMOS  Total ionizing dose effect   Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697 作者:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa) 收藏  |  浏览/下载：48/0  |  提交时间：2018/05/15 Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)