Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET

doi:10.1080/10420150.2019.1704757

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 中国科学院特殊环境功能材料与器件重点试验室

	Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET
	Liang, XW (Liang, Xiaowen)[ 1,2,3 ]; Cui, JW (Cui, Jiangwei)[ 1,2 ]; Zheng, QW (Zheng, Qiwen)[ 1,2 ]; Zhao, JH (Zhao, Jinghao)[ 1,2,3 ]; Yu, XF (Yu, Xuefeng)[ 1,2 ]; Sun, J (Sun, Jing)[ 1,2 ]; Zhang, D (Zhang, Dan)[ 1,2 ]; Guo, Q (Guo, Qi)[ 1,2 ]
刊名	RADIATION EFFECTS AND DEFECTS IN SOLIDS
	2020
卷号	175 期号:5-6 页码:559-566
关键词	SiC MOSFET total ionizing dose irradiation time-dependent dielectric breakdown
ISSN号	1042-0150
DOI	10.1080/10420150.2019.1704757
英文摘要	A study on the long-term reliability of SiC MOSFET in different operating biases under total ionizing dose radiation environment was carried out. The relationship between radiation-induced degradation of electrical parameters and time-dependent dielectric breakdown characteristics was analyzed through the energy band theory and feedback runaway model.
WOS记录号	WOS:000508095200001
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/7684]
专题	新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室
通讯作者	Yu, XF (Yu, Xuefeng)[ 1,2 ]
作者单位	1.Univ Chinese Acad Sci, Beijing, Peoples R China 2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi, Peoples R China 3.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi, Peoples R China
推荐引用方式 GB/T 7714	Liang, XW ,Cui, JW ,Zheng, QW ,et al. Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS,2020,175(5-6):559-566.
APA	Liang, XW .,Cui, JW .,Zheng, QW .,Zhao, JH .,Yu, XF .,...&Guo, Q .(2020).Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET.RADIATION EFFECTS AND DEFECTS IN SOLIDS,175(5-6),559-566.
MLA	Liang, XW ,et al."Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET".RADIATION EFFECTS AND DEFECTS IN SOLIDS 175.5-6(2020):559-566.