A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs

doi:10.1016/j.rinp.2019.102223

CORC > 新疆理化技术研究所 > 中国科学院新疆理化技术研究所 > 中国科学院特殊环境功能材料与器件重点试验室

	A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs
	Zhao, JH (Zhao, Jinghao)[ 1,2,3 ]; Zheng, QW (Zheng, Qiwen)[ 1,2 ]; Cui, JW (Cui, Jiangwei)[ 1,2 ]; Zhou, H (Zhou, Hang)[ 1,2,3 ]; Liang, XW (Liang, Xiaowen)[ 1,2,3 ]; Yu, XF (Yu, Xuefeng)[ 1,2 ]; Guo, Q (Guo, Qi)[ 1,2 ]
刊名	RESULTS IN PHYSICS
	2019
卷号	13 期号:6 页码:1-5
关键词	Hot carrier effect PMOS Total ionizing dose effect
ISSN号	2211-3797
DOI	10.1016/j.rinp.2019.102223
英文摘要	The hot carrier injection (HCI) effect induced degradation is investigated for gamma ray irradiated PD I/O SOI PMOSFETs with T-shaped gate and H-shaped gate. Radiation enhanced effect on degradation during hot carrier stress is observed in two kinds of samples. And it is observed that radiation has more significant effect on T-gate devices than H-gate during stress time. Besides, the change on gate current degradation induced by irradiation is also worth noticing.
WOS记录号	WOS:000476618700112
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/7247]
专题	新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室
通讯作者	Yu, XF (Yu, Xuefeng)[ 1,2 ]
作者单位	1.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 83001, Peoples R China 3.Chinese Acad Sci, Key Lab Funct Mat & Devices Special Environm, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
推荐引用方式 GB/T 7714	Zhao, JH ,Zheng, QW ,Cui, JW ,et al. A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs[J]. RESULTS IN PHYSICS,2019,13(6):1-5.
APA	Zhao, JH .,Zheng, QW .,Cui, JW .,Zhou, H .,Liang, XW .,...&Guo, Q .(2019).A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs.RESULTS IN PHYSICS,13(6),1-5.
MLA	Zhao, JH ,et al."A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs".RESULTS IN PHYSICS 13.6(2019):1-5.