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| The transformation of the lithospheric mantle beneath South China Block (SCB): constraints from petrological and geochemical studies of Daoxian and Ningyuan basalts and their melt inclusions 期刊论文
INTERNATIONAL GEOLOGY REVIEW, 2019, 页码: 24
作者: Duan, Xianzhe; Zhang, Hongfu; Santosh, M.; Tian, Hengci; Sun, He
  收藏 | 浏览/下载：70/0 | 提交时间：2019/07/29
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| Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts 期刊论文
IEEE Transactions on Electron Devices, 2018
作者: Ye TC(叶甜春) ; Mao SJ(毛淑娟); Wang GL(王桂磊); Xu J(许静); Luo X(罗雪)
收藏 | 浏览/下载：36/0 | 提交时间：2019/05/05 |
| Enhancing the thermal stability of NiGe by prior-germanidation fluorine implantation into Ge substrate 期刊论文
Japanese Journal of Applied Physics, 2018
作者: Zhang D(张丹); Wang WW(王文武); Chen DP(陈大鹏); Li JF(李俊峰); Liu S(刘实)
收藏 | 浏览/下载：21/0 | 提交时间：2019/05/20 |
| Impact of Ge pre-amorphization implantation on forming ultrathin TiGe x on both n-and p-Ge substrate 期刊论文
Japanese Journal of Applied Physics, 2018
作者: Liu S(刘实); Li JF(李俊峰); Wang WW(王文武); Chen DP(陈大鹏); Zhao C(赵超)
收藏 | 浏览/下载：11/0 | 提交时间：2019/05/20 |
| 面向先进CMOS技术节点的NiSi和NiGe接触技术研究 学位论文
: 中国科学院大学, 2018
作者: 段宁远
收藏 | 浏览/下载：14/0 | 提交时间：2018/09/05 |
| On the manifestation ofGe Pre-amorphization Implantation (PAI) in forming ultrathin TiSix for Ti direct contact on Si in sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) technology nodes 期刊论文
ECS Journal of Solid State Science and Technology, 2017
作者: Wang GL(王桂磊); Li JF(李俊峰); Zhao C(赵超); Ye TC(叶甜春); Chen DP(陈大鹏)
收藏 | 浏览/下载：42/0 | 提交时间：2018/06/08 |
| 用于FET的PECVD SiNx掺杂MoS2的有效性与可控性 期刊论文
微纳电子技术, 2017
作者: 罗军; 贾昆鹏; 粟雅娟; 战俊; 段宁远
收藏 | 浏览/下载：10/0 | 提交时间：2018/07/09 |
| Reduction of NiGe/n-and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation 期刊论文
IEEE Transactions on Electron Devices, 2016
作者: Duan NY(段宁远); Wang GL(王桂磊); Liu JB(刘金彪); Eddy simoen; Mao SJ(毛淑娟)
收藏 | 浏览/下载：15/0 | 提交时间：2017/05/09 |
| Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology 期刊论文
Microelectronics Engineering, 2016
作者: Wang GL(王桂磊); Qin ZL(秦长亮); Yin HX(殷华湘); Duan NY(段宁远); Yang T(杨涛)
收藏 | 浏览/下载：9/0 | 提交时间：2017/05/09 |
| On the Manipulation of Phosphorus Diffusion as Well as the Reduction of Specific Contact Resistivity in Ge by Carbon Co-Doping 期刊论文
ECS Transactions, 2016
作者: Luo J(罗军); Liu JB(刘金彪); Eddy Simoen; Wang GL(王桂磊); Mao SJ(毛淑娟)
收藏 | 浏览/下载：27/0 | 提交时间：2017/05/09 |
