Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts

	Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts
	Ye TC(叶甜春); Mao SJ(毛淑娟); Wang GL(王桂磊); Xu J(许静); Luo X(罗雪); Zhang D(张丹); Duan NY(段宁远); Liu S(刘实); Wang WW(王文武); Chen DP(陈大鹏)
刊名	IEEE Transactions on Electron Devices
	2018-08-08
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/19093]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Ye TC,Mao SJ,Wang GL,et al. Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts[J]. IEEE Transactions on Electron Devices,2018.
APA	Ye TC.,Mao SJ.,Wang GL.,Xu J.,Luo X.,...&Jun Luo.(2018).Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts.IEEE Transactions on Electron Devices.
MLA	Ye TC,et al."Impact of Ge Preamorphization Implantation on Both the Formation of Ultrathin TiSix and the Specific Contact Resistivity in TiSix/n-Si Contacts".IEEE Transactions on Electron Devices (2018).