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期刊论文 [47]
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A SiC asymmetric cell trench MOSFET with a split gate and integrated p(+)-poly Si/SiC heterojunction freewheeling diode
期刊论文
CHINESE PHYSICS B, 2023, 卷号: 32, 期号: 5, 页码: 8
作者:
Jiang, Kaizhe
;
Zhang, Xiaodong
;
Tian, Chuan
;
Zhang, Shengrong
;
Zheng, Liqiang
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2023/10/07
split gate (SG)
heterojunction freewheeling diode (HJD)
SiC asymmetric cell trench MOSFET
turn-on loss
turn-off loss
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs
期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:
Feng, HN (Feng, Haonan) [1] , [2] , [3]
;
Yang, S (Yang, Sheng) [1] , [2] , [3]
;
Liang, XW (Liang, Xiaowen) [1] , [2] , [3]
;
Zhang, D (Zhang, Dan) [1] , [2] , [3]
;
Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2022/03/24
SiC Power MOSFETs
Switching Characteristics
Total Ionizing Dose (TID) Effect
Static Characteristic
Parasitic Capacitance
SiC MOSFET在三相PWM整流器中的研究与应用
期刊论文
工业仪表与自动化装置, 2020, 期号: 2020-06, 页码: 75-79
作者:
米保全
;
李许军
;
王春霞
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2020/12/18
SiCMOSFET
三相PWM整流器
高频
过流
Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 559-566
作者:
Liang, XW (Liang, Xiaowen)[ 1,2,3 ]
;
Cui, JW (Cui, Jiangwei)[ 1,2 ]
;
Zheng, QW (Zheng, Qiwen)[ 1,2 ]
;
Zhao, JH (Zhao, Jinghao)[ 1,2,3 ]
;
Yu, XF (Yu, Xuefeng)[ 1,2 ]
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2020/12/11
SiC MOSFET
total ionizing dose irradiation
time-dependent dielectric breakdown
Large current nanosecond pulse generating circuit for driving semiconductor laser diode
期刊论文
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2019, 卷号: 61, 期号: 4, 页码: 867
作者:
Wen, Shaocong
;
Wang, Mao
;
Xie, Jie
;
Wu, Dongmin
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2019/12/26
circuit modeling
driver circuit
light detection and ranging (Lidar)
semiconductor lasers
time-of-flight (TOF)
A Single Gate Driver Based Solid-State Circuit Breaker Using Series Connected SiC MOSFETs
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: 34, 页码: 2002-2006
作者:
Ren, Yu
;
Yang, Xu
;
Zhang, Fan
;
Wang, Fei
;
Tolbert, Leon M.
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  |  
浏览/下载:33/0
  |  
提交时间:2019/11/19
Gate drivers
Integrated circuit reliability
MOS-FET
Series connections
SiC MOSFET
Solid State Circuit Breaker
Voltage balancing
Wide band gap devices
Online junction temperature estimation method for SiC modules with built-in NTC sensor
期刊论文
CPSS Transactions on Power Electronics and Applications, 2019, 卷号: Vol.4 No.1, 页码: 94-99
作者:
Ping Liu
;
Changle Chen
;
Xing Zhang
;
Shoudao Huang
收藏
  |  
浏览/下载:101/0
  |  
提交时间:2019/12/13
Silicon carbide
Junctions
MOSFET
Temperature sensors
Impedance
Heating systems
Mathematical model
Boundary conditions
junction temperature
silicon carbide (SiC)
thermal model.
Carrier-Based Double Integral Sliding-Mode Controller of Class-D Amplifier
期刊论文
IEEE Access, 2019, 卷号: Vol.7, 页码: 1275-1283
作者:
Xiaohua Wu
;
Haider Zaman
;
Xiancheng Zheng
;
Shahbaz Khan
;
Husan Ali
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/13
Mathematical
model
Frequency
response
Q-factor
Control
systems
Switching
frequency
Silicon
carbide
Voltage
control
Carrier-based
double
integral
sliding-mode
(CBDISM)
class-D
amplifier
Q-factor
SiC
MOSFET
Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.3, 页码: 2771-2780
作者:
Jun Wang
;
Xi Jiang
;
Zongjian Li
;
Z. John Shen
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/13
MOSFET
Silicon carbide
Logic gates
Insulated gate bipolar transistors
Switches
Leakage currents
Silicon
Failure analysis
gate control
hybrid switch (HyS)
IGBT
short-circuit (SC)
Silicon Carbide (SiC) $\scriptscriptstyle{\text{MOSFET}}$
Gate Control Optimization of Si/SiC Hybrid Switch for Junction Temperature Balance and Power Loss Reduction
期刊论文
IEEE Transactions on Power Electronics, 2019, 卷号: Vol.34 No.2, 页码: 1744-1754
作者:
Jun Wang
;
Zongjian Li
;
Xi Jiang
;
Cheng Zeng
;
Z. John Shen
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/13
Switches
Insulated
gate
bipolar
transistors
Silicon
carbide
MOSFET
Logic
gates
Silicon
Gate
control
hybrid
switch
IGBT
junction
temperature
mosfet
power
loss
SiC
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