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	Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch
	Jun Wang; Xi Jiang; Zongjian Li; Z. John Shen
刊名	IEEE Transactions on Power Electronics
	2019
卷号	Vol.34 No.3页码:2771-2780
关键词	MOSFET Silicon carbide Logic gates Insulated gate bipolar transistors Switches Leakage currents Silicon Failure analysis gate control hybrid switch (HyS) IGBT short-circuit (SC) Silicon Carbide (SiC) $\scriptscriptstyle{\text{MOSFET}}$
ISSN号	0885-8993;1941-0107
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4610035
专题	湖南大学
作者单位	College of Electrical and Information Engineering, Hunan University, Changsha, China
推荐引用方式 GB/T 7714	Jun Wang,Xi Jiang,Zongjian Li,et al. Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch[J]. IEEE Transactions on Power Electronics,2019,Vol.34 No.3:2771-2780.
APA	Jun Wang,Xi Jiang,Zongjian Li,&Z. John Shen.(2019).Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch.IEEE Transactions on Power Electronics,Vol.34 No.3,2771-2780.
MLA	Jun Wang,et al."Short-Circuit Ruggedness and Failure Mechanisms of Si/SiC Hybrid Switch".IEEE Transactions on Power Electronics Vol.34 No.3(2019):2771-2780.

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