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科研机构
新疆理化技术研究所 [20]
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期刊论文 [14]
学位论文 [6]
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2022 [1]
2020 [4]
2019 [2]
2018 [2]
2017 [3]
2016 [2]
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Chemistry [1]
Materials ... [1]
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Single event transient effect of frontside and backside illumination image sensors under proton irradiation
期刊论文
ACTA PHYSICA SINICA, 2022, 卷号: 71, 期号: 5, 页码: 1-9
作者:
Fu, J (Fu Jing) [1] , [2] , [3]
;
Cai, YL (Cai Yu-Long) [4]
;
Li, YD (Li Yu-Dong) [1] , [2]
;
Feng, J (Feng Jie) [1] , [2]
;
Wen, L (Wen Lin) [1] , [2]
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2022/06/06
CMOS image sensor
proton irradiation
single event effect
transientbrightspot
Degradation characteristics of electron and proton irradiated InGaAsP/InGaAs dual junction solar cell
期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 卷号: 206, 期号: 3, 页码: 1-7
作者:
Zhao, XF (Zhao, X. F.)[ 1 ]
;
Aierken, A (Aierken, A.)[ 1,2 ]
;
Heini, M (Heini, M.)[ 1,3 ]
;
Tan, M (Tan, M.)[ 4 ]
;
Wu, YY (Wu, Y. Y.)[ 4 ]
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2020/04/21
InGaAsP/InGaAs solar cell
Electron and proton irradiation
Degradation
Equivalent displacement damage dose model
A study of hot pixels induced by proton and neutron irradiations in charge coupled devices
期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2020/07/06
Charge coupled devices (CCDs)
proton irradiation
neutron irradiation
hot pixels
displacement damage effects
Optoelectronic Performance Analysis of Low-Energy Proton Irradiation and Post-Thermal Annealing Effects on InGaAs Solar Cell
期刊论文
FRONTIERS IN PHYSICS, 2020, 卷号: 8, 期号: 11, 页码: 1-7
作者:
Zhuang, Y (Zhuang, Y.)[ 1 ]
;
Aierken, A (Aierken, A.)[ 1 ]
;
Lei, QQ (Lei, Q. Q.)[ 2,3 ]
;
Fang, L (Fang, L.)[ 4 ]
;
Shen, XB (Shen, X. B.)[ 2,3 ]
收藏
  |  
浏览/下载:37/0
  |  
提交时间:2021/01/05
InGaAs solar cell
proton irradiation
displacement damage
degradation
annealing
Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors
期刊论文
RESULTS IN PHYSICS, 2020, 卷号: 19, 期号: 12, 页码: 1-7
作者:
Liu, BK (Liu, Bingkai)[ 1,2,3 ]
;
Li, YD (Li, Yudong)[ 1,2 ]
;
Wen, L (Wen, Lin)[ 1,2 ]
;
Zhou, D (Zhou, Dong)[ 1,2 ]
;
Feng, J (Feng, Jie)[ 1,2 ]
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2021/03/19
Backside illuminated CMOS image sensor
Random telegraph signal
Radiation effects
Proton irradiation
Theoretical calculation
Spectral and electrical properties of 3 MeV and 10 MeV proton irradiated InGaAsP single junction solar cell
期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 卷号: 58, 期号: 3, 页码: 1-6
作者:
Xu, Y (Xu, Yan)[ 1,2 ]
;
Heini, M (Heini, Maliya)[ 2 ]
;
Shen, XB (Shen, Xiaobao)[ 2,3 ]
;
Aierken, A (Aierken, Abuduwayiti)[ 2,4 ]
;
Zhao, XF (Zhao, Xiaofan)[ 2 ]
收藏
  |  
浏览/下载:134/0
  |  
提交时间:2019/03/19
150 KeV proton irradiation effects on photoluminescence of GaInAsN bulk and quantum well structures
期刊论文
OPTICAL MATERIALS, 2019, 卷号: 97, 期号: 11, 页码: 1-6
作者:
Lei, QQ (Lei, Q. Q.)[ 1,2 ]
;
Aierken, A (Aierken, A.)[ 2,3 ]
;
Sailai, M (Sailai, M.)[ 2 ]
;
Heini, M (Heini, M.)[ 2,4 ]
;
Shen, XB (Shen, X. B.)[ 2 ]
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2020/01/10
Dilute nitride
InGaAsN
Proton irradiation
Degradation
PL spectra
Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices
期刊论文
MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116
作者:
Ma, T (Ma, Teng)
;
Yu, XF (Yu, Xuefeng)
;
Cui, JW (Cui, Jiangwei)
;
Zheng, QW (Zheng, Qiwen)
;
Zhou, H (Zhou, Hang)
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2018/03/14
Reliability
Proton Irradiation
Radiation Induced Leakage Current (Rilc)
Time-dependent Dielectric Breakdown (Tddb)
Total Ionizing Does (Tid)
Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells
期刊论文
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2018, 卷号: 185, 期号: 10, 页码: 36-44
作者:
Aierken, A (Aierken, A.)[ 1 ]
;
Fang, L (Fang, L.)[ 2 ]
;
Heini, M (Heini, M.)[ 1 ]
;
Zhang, QM (Zhang, Q. M.)[ 2 ]
;
Li, ZH (Li, Z. H.)[ 1,3 ]
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2018/08/07
Upright Metamorphic
Solar Cell
Proton Irradiation
Degradation
Srim
Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors
期刊论文
CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 11, 页码: 1-5
作者:
Ma, LD (Ma, Lindong)
;
Li, YD (Li, Yudong)
;
Guo, Q (Guo, Qi)
;
Wen, L (Wen, Lin)
;
Zhou, D (Zhou, Dong)
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2018/01/08
Complementary Metal-oxide-semiconductor (Cmos) Active Pixel Sensor
Dark Current
Fixed-pattern Noise
Quantum Efficiency
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