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浏览/检索结果: 共2条，第1-2条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 gamma-Ray Radiation Effects on an HfO2-Based Resistive Memory Device 期刊论文 IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 卷号: 17, 期号: 1, 页码: 61-64 作者:  Hu, SG (Hu, Shaogang);  Liu, Y (Liu, Yang);  Chen, TP (Chen, Tupei);  Guo, Q (Guo, Qi);  Li, YD (Li, Yu-Dong) 收藏  |  浏览/下载：34/0  |  提交时间：2018/01/31 Gamma-ray  Hafnium Oxide  Radiation  Resistive Switching  Total Ionizing Dose   Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文 MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116 作者:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang) 收藏  |  浏览/下载：53/0  |  提交时间：2018/03/14 Reliability  Proton Irradiation  Radiation Induced Leakage Current (Rilc)  Time-dependent Dielectric Breakdown (Tddb)  Total Ionizing Does (Tid)