Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells
Aierken, A (Aierken, A.)[ 1 ]; Fang, L (Fang, L.)[ 2 ]; Heini, M (Heini, M.)[ 1 ]; Zhang, QM (Zhang, Q. M.)[ 2 ]; Li, ZH (Li, Z. H.)[ 1,3 ]; Zhao, XF (Zhao, X. F.)[ 1,3 ]; Sailai, M (Sailai, M.)[ 1 ]; Liu, HT (Liu, H. T.)[ 1 ]; Guo, Q (Guo, Q.)[ 1 ]; Gao, W (Gao, W.)[ 2 ]
刊名SOLAR ENERGY MATERIALS AND SOLAR CELLS
2018
卷号185期号:10页码:36-44
关键词Upright Metamorphic Solar Cell Proton Irradiation Degradation Srim
ISSN号0927-0248
DOI10.1016/j.solmat.2018.04.035
英文摘要

The electrical parameters and external quantum efficiency (EQE) of 3 MeV and 8 MeV proton beam irradiated upright metamorphic (UMM) GaInP/GaInAs/Ge triple-junction solar cells, grown by metal-organic chemical vapor deposition, have been investigated and compared to lattice-matched (LM) GaInP/GaInAs/Ge solar cells. High-resolution X-ray diffraction was used to study the relaxation of strain by analysing reciprocal space maps. Threading dislocation density was estimated from cathodoluminescence image. SRIM simulation results have been applied for analysing the irradiation induced displacement damage and its effects on cell performance. The results show that the electrical parameters of both UMM and LM cells degraded more by 3 MeV proton compared to 8 MeV proton irradiation. The degradation of V-oc and I-sc depends on each other in both UMM and LM cells but have different features under proton irradiation due to different cell configurations, materials, and parameters etc. EQE spectra of UMM and LM cells mainly degrades in longer wavelength region due to the reduction of minority carrier diffusion length. Top GaInP subcell in UMM cell shows better radiation resistance than LM cell due to the higher In-P composition, and middle GaInAs middle subcell in UMM structure shows weaker radiation resistance because of the relatively higher indium composition.

WOS记录号WOS:000437816100006
内容类型期刊论文
源URL[http://ir.xjipc.cas.cn/handle/365002/5519]  
专题新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室
新疆理化技术研究所_材料物理与化学研究室
通讯作者Aierken, A (Aierken, A.)[ 1 ]
作者单位1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Device Special Environm, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China
2.Tianjin Inst Power Source, 6 Huakeqi Rd,Hitech Ind Pk, Tianjin 300384, Peoples R China
3.Univ Chinese Acad Sci, 19-A Yuquan Rd, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Aierken, A ,Fang, L ,Heini, M ,et al. Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2018,185(10):36-44.
APA Aierken, A .,Fang, L .,Heini, M .,Zhang, QM .,Li, ZH .,...&Sun, Q .(2018).Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells.SOLAR ENERGY MATERIALS AND SOLAR CELLS,185(10),36-44.
MLA Aierken, A ,et al."Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells".SOLAR ENERGY MATERIALS AND SOLAR CELLS 185.10(2018):36-44.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace