Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors | |
Ma, LD (Ma, Lindong); Li, YD (Li, Yudong); Guo, Q (Guo, Qi); Wen, L (Wen, Lin); Zhou, D (Zhou, Dong); Feng, J (Feng, Jie); Liu, Y (Liu, Yuan); Zeng, JZ (Zeng, Junzhe); Zhang, X (Zhang, Xiang); Wang, TH (Wang, Tianhui) | |
刊名 | CHINESE PHYSICS B |
2017 | |
卷号 | 26期号:11页码:1-5 |
关键词 | Complementary Metal-oxide-semiconductor (Cmos) Active Pixel Sensor Dark Current Fixed-pattern Noise Quantum Efficiency |
ISSN号 | 1674-1056 |
DOI | 10.1088/1674-1056/26/11/114212 |
英文摘要 | Radiation effects on complementary metal-oxide-semiconductor (CMOS) active pixel sensors (APS) induced by proton and gamma-ray are presented. The samples are manufactured with the standards of 0.35 mu m CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 x 10(11) protons/cm(2) and 2.14 x 10(11) protons/cm(2), respectively, while another sample has been exposed un-biased to 65 krad(Si) Co-60 gamma-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both gamma-ray and proton irradiation increase the non-uniformity of the signal, but the non-uniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed, especially for the interaction induced by proton displacement damage and total ion dose (TID) damage. |
WOS记录号 | WOS:000415072400012 |
内容类型 | 期刊论文 |
源URL | [http://ir.xjipc.cas.cn/handle/365002/5083] |
专题 | 新疆理化技术研究所_中国科学院特殊环境功能材料与器件重点试验室 新疆理化技术研究所_材料物理与化学研究室 |
通讯作者 | Li, YD (Li, Yudong) |
作者单位 | 1.Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Devices Special Environm, Urumqi 830011, Peoples R China 2.Xinjiang Key Lab Elect Informat Mat & Device, Urumqi 830011, Peoples R China 3.Univ Chinese Acad Sci, Beijing 100190, Peoples R China |
推荐引用方式 GB/T 7714 | Ma, LD ,Li, YD ,Guo, Q ,et al. Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors[J]. CHINESE PHYSICS B,2017,26(11):1-5. |
APA | Ma, LD .,Li, YD .,Guo, Q .,Wen, L .,Zhou, D .,...&Wang, TH .(2017).Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors.CHINESE PHYSICS B,26(11),1-5. |
MLA | Ma, LD ,et al."Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors".CHINESE PHYSICS B 26.11(2017):1-5. |
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