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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 专题：新疆理化技术研究所    第一署名单位    第一作者单位    通讯作者单位    内容类型：期刊论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Degradation characteristics of electron and proton irradiated InGaAsP/InGaAs dual junction solar cell 期刊论文 SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2020, 卷号: 206, 期号: 3, 页码: 1-7 作者:  Zhao, XF (Zhao, X. F.)[ 1 ];  Aierken, A (Aierken, A.)[ 1,2 ];  Heini, M (Heini, M.)[ 1,3 ];  Tan, M (Tan, M.)[ 4 ];  Wu, YY (Wu, Y. Y.)[ 4 ] 收藏  |  浏览/下载：32/0  |  提交时间：2020/04/21 InGaAsP/InGaAs solar cell  Electron and proton irradiation  Degradation  Equivalent displacement damage dose model   A study of hot pixels induced by proton and neutron irradiations in charge coupled devices 期刊论文 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 540-550 作者:  Liu, BK (Liu, Bingkai)[ 1,2,3 ];  Li, YD (Li, Yudong)[ 1,2 ];  Wen, L (Wen, Lin)[ 1,2 ];  Zhou, D (Zhou, Dong)[ 1,2 ];  Feng, J (Feng, Jie)[ 1,2 ] 收藏  |  浏览/下载：40/0  |  提交时间：2020/07/06 Charge coupled devices (CCDs)  proton irradiation  neutron irradiation  hot pixels  displacement damage effects   Optoelectronic Performance Analysis of Low-Energy Proton Irradiation and Post-Thermal Annealing Effects on InGaAs Solar Cell 期刊论文 FRONTIERS IN PHYSICS, 2020, 卷号: 8, 期号: 11, 页码: 1-7 作者:  Zhuang, Y (Zhuang, Y.)[ 1 ];  Aierken, A (Aierken, A.)[ 1 ];  Lei, QQ (Lei, Q. Q.)[ 2,3 ];  Fang, L (Fang, L.)[ 4 ];  Shen, XB (Shen, X. B.)[ 2,3 ] 收藏  |  浏览/下载：37/0  |  提交时间：2021/01/05 InGaAs solar cell  proton irradiation  displacement damage  degradation  annealing   Radiation Effects Due to 3 MeV Proton Irradiations on Back-Side Illuminated CMOS Image Sensors 期刊论文 CHINESE PHYSICS LETTERS, 2018, 卷号: 35, 期号: 7, 页码: 1-4 作者:  Zhang, X (Zhang, Xiang);  Li, YD (Li, Yu-Dong);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong);  Feng, J (Feng, Jie) 收藏  |  浏览/下载：31/0  |  提交时间：2018/08/14 Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文 MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116 作者:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang) 收藏  |  浏览/下载：54/0  |  提交时间：2018/03/14 Reliability  Proton Irradiation  Radiation Induced Leakage Current (Rilc)  Time-dependent Dielectric Breakdown (Tddb)  Total Ionizing Does (Tid)   Effects of proton irradiation on upright metamorphic GaInP/GaInAs/Ge triple junction solar cells 期刊论文 SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2018, 卷号: 185, 期号: 10, 页码: 36-44 作者:  Aierken, A (Aierken, A.)[ 1 ];  Fang, L (Fang, L.)[ 2 ];  Heini, M (Heini, M.)[ 1 ];  Zhang, QM (Zhang, Q. M.)[ 2 ];  Li, ZH (Li, Z. H.)[ 1,3 ] 收藏  |  浏览/下载：38/0  |  提交时间：2018/08/07 Upright Metamorphic  Solar Cell  Proton Irradiation  Degradation  Srim   Analysis of proton and gamma-ray radiation effects on CMOS active pixel sensors 期刊论文 CHINESE PHYSICS B, 2017, 卷号: 26, 期号: 11, 页码: 1-5 作者:  Ma, LD (Ma, Lindong);  Li, YD (Li, Yudong);  Guo, Q (Guo, Qi);  Wen, L (Wen, Lin);  Zhou, D (Zhou, Dong) 收藏  |  浏览/下载：36/0  |  提交时间：2018/01/08 Complementary Metal-oxide-semiconductor (Cmos) Active Pixel Sensor  Dark Current  Fixed-pattern Noise  Quantum Efficiency   Characteristics of p-i-n diodes basing on displacement damage detector 期刊论文 RADIATION PHYSICS AND CHEMISTRY, 2017, 卷号: 139, 期号: 10, 页码: 11-16 作者:  Sun, J (Sun Jing)[ 1,2 ];  Guo, Q (Guo Qi)[ 1 ];  Yu, X (Yu Xin)[ 1,2 ];  He, CF (He Cheng-Fa)[ 1 ];  Shi, WL (Shi Wei-Lei)[ 1 ] 收藏  |  浏览/下载：33/0  |  提交时间：2019/07/10 Displacement damage  NIEL  P-i-n photodiode  Damage enhancement factor   Dark signal degradation in proton-irradiated complementary metal oxide semiconductor active pixel sensor 期刊论文 ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 8, 页码: 193-199 作者:  Wang, B (Wang Bo);  Li, YD (Li Yu-Dong);  Guo, Q (Guo Qi);  Liu, CJ (Liu Chang-Ju);  Wen, L (Wen Lin) 收藏  |  浏览/下载：21/0  |  提交时间：2018/01/26 Complementary Metal Oxide Semiconductor Active Pixel Sensor  Dark Signal  Proton Radiation  Displacement Effect   High tolerance of proton irradiation of Ge2Sb2Te5 phase change material 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2013, 卷号: 575, 期号: 10, 页码: 229-232 作者:  Zhou Dong;  Wu Liangcai;  Guo Qi;  Peng Cheng;  He Chengfa 收藏  |  浏览/下载：31/0  |  提交时间：2013/11/07 Phase change material  Ge2Sb2Te5  Proton irradiation  Radiation damage