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CORC

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Impact of High TID Irradiation on Stability of 65 nm SRAM Cells 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 卷号: 69, 期号: 5, 页码: 1044-1050
作者:  Cui, JW (Cui, Jiangwei) [1];  Zheng, QW (Zheng, Qiwen) [1];  Li, YD (Li, Yudong) [1];  Guo, Q (Guo, Qi) [1]
收藏  |  浏览/下载：18/0  |  提交时间：2022/06/21
Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC mitigation strategies 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2021, 卷号: 32, 期号: 12, 页码: 13
作者:  He, Ze;  Zhao, Shi-Wei;  Liu, Tian-Qi;  Cai, Chang;  Yan, Xiao-Yu
收藏  |  浏览/下载：68/0  |  提交时间：2022/01/12
Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 期号: 6, 页码: 892-898
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载：74/0  |  提交时间：2019/11/10
Redesigning pipeline when architecting STT-RAM as registers in rad-hard environment 期刊论文
SUSTAINABLE COMPUTING-INFORMATICS & SYSTEMS, 2019, 卷号: 22, 页码: 206-218
作者:  Gong, Zhiyao;  Qiu, Keni;  Chen, Weiwen;  Ni, Yuanhui;  Xu, Yuanchao
收藏  |  浏览/下载：22/0  |  提交时间：2019/12/30
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文
Geneva, SWITZERLAND, OCT 02-06, 2017
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载：39/0  |  提交时间：2018/10/08
Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697
作者:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa)
收藏  |  浏览/下载：48/0  |  提交时间：2018/05/15
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ]
收藏  |  浏览/下载：53/0  |  提交时间：2018/09/27
All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 12, 页码: 1876-1879
作者:  Yang, Jin;  Yuan, Yuzhuo;  Li, Yunpeng;  Du, Lulu;  Wang, Yiming
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Write energy optimization for STT-MRAM cache with data pattern characterization 会议论文
2018 IEEE COMPUTER SOCIETY ANNUAL SYMPOSIUM ON VLSI (ISVLSI), 2018-01-01
作者:  Xu, Bi;  Zhang, Xiaolong;  Cheng, Yuanqing;  Wang, Zhaohao;  Liu, Dijun
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/30
Exploring potentials of NAND-like spintronics MRAM for cache design (Invited) 会议论文
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings
作者:  Wu, B.;  Zhang, B.;  Xu, Y.;  Wang, Z.;  Liu, D.
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/30

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