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The controllable electronic characteristics and Schottky barrier of graphene/GaP heterostructure via interlayer coupling and in-plane strain
期刊论文
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2022, 卷号: 284
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Guo, Xin
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2022/08/09
Binding energy
Calculations
Gallium compounds
Graphene
Ground state
Heterojunctions
III-V semiconductors
Ohmic contacts
Schottky barrier diodes
Strain
Thermoelectric equipment
Van der Waals forces
Electronic characteristics
Graphene/GaP
In-plane strains
Interlayer coupling
Layer-spacing
Micro/nano
Nanoelectronic devices
P-type
Schottky barriers
Schottky contacts
Finely dispersed and highly toluene sensitive NiO/NiGa2O4 heterostructures prepared from layered double hydroxides precursors
期刊论文
SENSORS AND ACTUATORS B-CHEMICAL, 2021, 卷号: 345, 页码: 9
作者:
Nie, Linfeng
;
Fan, Guijun
;
Wang, Anqi
;
Zhang, Le
;
Guan, Jian
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2021/10/15
Layered double hydroxides
Toluene sensor
Heterojunction
Schottky barrier
Effects of vertical strain and electric field on the electronic properties and interface contact of graphene/InP vdW heterostructure
期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2021, 卷号: 198
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Guo, Xin
;
Ren, Junqiang
;
Xue, Hongtao
收藏
  |  
浏览/下载:5/0
  |  
提交时间:2021/10/14
Graphene
InP
Heterostructure
Vertical strain
Electric field
Schottky barrier
Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field
期刊论文
Vacuum, 2021, 卷号: 188
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2021/06/03
Optoelectronic devices
Schottky barrier diodes
Van der Waals forces
Electronic performance
Electronics devices
External strains
First principle calculations
Optoelectronics devices
P-type
Schottky barriers
Schottky contacts
Si$-3$/N$-4$
Van der Waal
Improved photocatalytic degradation and reduction performance of Bi2O3 by the decoration of AuPt alloy nanoparticles
期刊论文
Optical Materials, 2021, 卷号: 111
作者:
Xian, Tao
;
Sun, Xiaofeng
;
Di, Lijing
;
Li, Hongqin
;
Yang, Hua
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2021/03/02
Binary alloys
Biodegradation
Bismuth alloys
Bismuth compounds
Chemical detection
Chromium compounds
Complexation
Nanoparticles
Photocatalytic activity
Plasmons
Platinum alloys
Reduction
Schottky barrier diodes
Surface plasmon resonance
Au-pt alloy nanoparticles
Diffuse reflectance spectrum
Homogeneous distribution
Photo catalytic degradation
Photogenerated charge
Photoinduced electrons
Schottky barrier heights
XPS characterization
Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy
期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2020, 卷号: 478, 页码: 5-10
作者:
Huang, Mingmin
;
Yang, Zhimei
;
Wang, Shaomin
;
Liu, Jiyuan
;
Gong, Min
收藏
  |  
浏览/下载:26/0
  |  
提交时间:2021/12/15
Schottky barrier diodes
Raman spectroscopy
Recrystallization effect
Swift heavy ion
SiC
Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 19, 页码: 17663-17669
作者:
Liu, Xiangzhi
;
Zhou, Quan
;
Luo, Shi
;
Du, Haiwei
;
Cao, Zhensong
收藏
  |  
浏览/下载:60/0
  |  
提交时间:2019/06/24
graphene
nanoparticle
photodetector
hot electron
Schottky barrier
thermionic emission
Hybrid graphene heterojunction photodetector with high infrared responsivity through barrier tailoring
期刊论文
NANOTECHNOLOGY, 2019, 卷号: 30, 期号: 19, 页码: 7
作者:
Zhou, Quan
;
Shen, Jun
;
Liu, Xiangzhi
;
Li, Zhancheng
;
Jiang, Hao
收藏
  |  
浏览/下载:61/0
  |  
提交时间:2019/03/25
graphene
silicon
Schottky junction
barrier height
infrared photodetector
Microfluidic-enhanced 3-D photoanodes with free interfacial energy barrier for photoelectrochemical applications
期刊论文
APPLIED CATALYSIS B-ENVIRONMENTAL, 2019, 卷号: 244, 页码: 740-747
作者:
Gu, Zhenao
;
An, Xiaoqiang
;
Lan, Huachun
;
Tian, Yu
;
Zhang, Jinxing
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2020/10/23
Flow-through photoanodes
Internal electrostatic field
Schottky barrier
Mass transfer
Photoelectrochemical
New insights into linear electrical properties of pressureless sintered SiC-MoSi2-AlN composites
期刊论文
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2019, 卷号: 39, 期号: 4, 页码: 773
作者:
Zheng, Jia-Qi
;
Chen, Jian
;
Liu, Xue-Jian
;
Huang, Zheng-Ren
;
Chen, Jun-Jun
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2019/12/26
Silicon carbide
Molybdenum disilicide
Linear electrical property
Schottky barrier
Electrical percolation
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