Hybrid graphene heterojunction photodetector with high infrared responsivity through barrier tailoring

doi:10.1088/1361-6528/aaf266

	Hybrid graphene heterojunction photodetector with high infrared responsivity through barrier tailoring
	Zhou, Quan 1,2; Shen, Jun1 ; Liu, Xiangzhi 1,3; Li, Zhancheng1 ; Jiang, Hao1 ; Feng, Shuanglong1 ; Feng, Wenlin 3; Wang, Yuefeng 1,2; Wei, Dapeng1
刊名	NANOTECHNOLOGY
	2019-05-10
卷号	30 期号:19 页码:7
关键词	graphene silicon Schottky junction barrier height infrared photodetector
ISSN号	0957-4484
DOI	10.1088/1361-6528/aaf266
通讯作者	Feng, Wenlin(wenlinfeng@126.com) ; Wei, Dapeng(dpwei@cigit.ac.cn)
英文摘要	The graphene/Si heterojunction is attractive for high gain and broadband photodetection through photogating effect. However, the photoresponsivity in these devices are still limited to under 1 A W-1 if no narrowband absorption-enhanced nanostructures were used. In this paper, the effects of barriers on photoresponse are systematically studied at 1550 nm wavelength. Different barrier heights are obtained through selection of substrates, graphene doping and electrical tuning. Lower barrier height for graphene side and higher barrier height for silicon side are found to be beneficial for better infrared photoresponse. Through Polyetherimide doping of graphene and back-gated electrical modulation, the responsivity finally reached 5.71 A W-1, which to our knowledge is among the best results for graphene-based infrared photodetectors with graphene adopted as a light-absorption material. It is found that the thermionic emission efficiency of indirect transition in graphene is related to the difference in emissioin barrier height, and the lifetime of photoinduced carriers in the channel can be enhanced by built-in potential. These results lay the foundation for the photodetection applicatioins of graphene/Si heterojunction in the longer-wavelength infrared region.
资助项目	NSFC[11404329] ; NSFC[61504148] ; NSFC[51402291] ; NSFC[61705229] ; Youth Innovation Promotion Association of CAS[2015316] ; Project of Chongqing brain science Collaborative Innovation Center ; Chongqing Research Program of Basic Research and Frontier Technology[cstc2015jcyjA50018] ; Project of CAS Western Young Scholar ; Project of CQ CSTC[cstc2017zdcy-zdyfX0001] ; Fundamental and Advanced Research Project (Key Program) of Chong Qing Municipality[cstc2015jcyjBX0046]
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000460059700002
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/7401]
专题	中国科学院重庆绿色智能技术研究院
通讯作者	Feng, Wenlin; Wei, Dapeng
作者单位	1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China 2.Ordnance Engn Coll, Dept Elect & Opt Engn, Shijiazhuang 050003, Hebei, Peoples R China 3.Chongqing Univ Technol, Dept Appl Phys, Chongqing 400054, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Quan,Shen, Jun,Liu, Xiangzhi,et al. Hybrid graphene heterojunction photodetector with high infrared responsivity through barrier tailoring[J]. NANOTECHNOLOGY,2019,30(19):7.
APA	Zhou, Quan.,Shen, Jun.,Liu, Xiangzhi.,Li, Zhancheng.,Jiang, Hao.,...&Wei, Dapeng.(2019).Hybrid graphene heterojunction photodetector with high infrared responsivity through barrier tailoring.NANOTECHNOLOGY,30(19),7.
MLA	Zhou, Quan,et al."Hybrid graphene heterojunction photodetector with high infrared responsivity through barrier tailoring".NANOTECHNOLOGY 30.19(2019):7.