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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 发表日期：2018     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择发表日期升序发表日期降序提交时间升序提交时间降序题名升序题名降序作者升序作者降序 Strain tunable ionic transport properties and electrochemical window of Li10GeP2S12 superionic conductor 期刊论文 COMPUTATIONAL MATERIALS SCIENCE, 2018, 卷号: 153, 页码: 170-175 作者:  Chen, Bingbing;  Ju, Jiangwei;  Ma, Jun;  Du, Huiping;  Xiao, Ruijuan 收藏  |  浏览/下载：58/0  |  提交时间：2018/12/21 Strain  Ionic transport  Solid electrolyte  First principles  All-solid-state lithium batteries   Total Ionizing Dose Characterization of a SRAM in 28nm UTBB FDSOI Technology 会议论文 作者:  Qiwen Zheng;  mengxin Liu;  Jiangwei Cui;  Shanxue Xi;  Ying Wei 收藏  |  浏览/下载：32/0  |  提交时间：2019/05/10 The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文 Geneva, SWITZERLAND, OCT 02-06, 2017 作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie 收藏  |  浏览/下载：38/0  |  提交时间：2018/10/08 Charge sharing  single-event upset (SEU)  static random access memory  total ionizing dose (TID)   Integrated Interface Strategy toward Room Temperature Solid-State Lithium Batteries 期刊论文 ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: 10, 期号: 16, 页码: 13588-13597 作者:  Ju, Jiangwei;  Wang, Yantao;  Chen, Bingbing;  Ma, Jun;  Dong, Shanmu 收藏  |  浏览/下载：51/0  |  提交时间：2018/12/21 Solid-state Lithium Batteries  Interface Compatibility  Sulfide Solid Electrolyte  Poly(Vinyl Carbonate)  In Situ Polymerization   Investigating the TDDB lifetime growth mechanism caused by proton irradiation in partially depleted SOI devices 期刊论文 MICROELECTRONICS RELIABILITY, 2018, 卷号: 81, 期号: 2, 页码: 112-116 作者:  Ma, T (Ma, Teng);  Yu, XF (Yu, Xuefeng);  Cui, JW (Cui, Jiangwei);  Zheng, QW (Zheng, Qiwen);  Zhou, H (Zhou, Hang) 收藏  |  浏览/下载：54/0  |  提交时间：2018/03/14 Reliability  Proton Irradiation  Radiation Induced Leakage Current (Rilc)  Time-dependent Dielectric Breakdown (Tddb)  Total Ionizing Does (Tid)   Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 2, 页码: 691-697 作者:  Zheng, QW (Zheng, Qiwen);  Cui, JW (Cui, Jiangwei);  Yu, XF (Yu, Xuefeng);  Lu, W (Lu, Wu);  He, CF (He, Chengfa) 收藏  |  浏览/下载：48/0  |  提交时间：2018/05/15 Static Noise Margin (Snm)  Static Random Access Memory (Sram)  Total Ionizing Dose (Tid)   The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927 作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ] 收藏  |  浏览/下载：53/0  |  提交时间：2018/09/27 Charge Sharing  Single-event Upset (Seu)  Static Random Access Memory  Total Ionizing Dose (Tid)