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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2022     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices 期刊论文 FRONTIERS IN MATERIALS, 2022, 卷号: 9 作者:  Lu, Guangbao;  Liu, Jun;  Zheng, Qirong;  Li, Yonggang 收藏  |  浏览/下载：20/0  |  提交时间：2022/12/23 total ionizing dose effect  dynamic modeling  doubly-hydrogenated oxygen vacancy  microscopic mechanism  MOS devices   Synergistic effects of total ionizing dose and radiated electromagnetic interference on analog-to-digital converter 期刊论文 NUCLEAR SCIENCE AND TECHNIQUES, 2022, 卷号: 33, 期号: 3, 页码: 1-9 作者:  Wu, P (Wu, Ping) [1] , [2];  Wen, L (Wen, Lin) [3] , [4];  Xu, ZQ (Xu, Zhi-Qian) [1] , [2];  Jiang, YS (Jiang, Yun-Sheng) [1] , [2];  Guo, Q (Guo, Qi) [3] , [4] 收藏  |  浏览/下载：20/0  |  提交时间：2022/04/07 Integrated circuit  Totalionizingdose  Electromagneticradiation  Synergistic effect  Combined environment   1/f Noise responses of Ultra-Thin Body and Buried oxide FD-SOI PMOSFETs under total ionizing dose irradiation 期刊论文 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 176, 期号: 11-12, 页码: 1202-1214 作者:  Zhang, RQ (Zhang, Ruiqin) [1] , [2] , [3];  Zheng, QW (Zheng, Qiwen) [1] , [2];  Lu, W (Lu, Wu) [1] , [2];  Cui, JW (Cui, Jiangwei) [1] , [2];  Li, YD (Li, Yudong) [1] , [2] 收藏  |  浏览/下载：20/0  |  提交时间：2022/04/07 Total ionizing dose irradiation  UTBB FD-SOI  1  f noise   Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs 期刊论文 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 177, 期号: 3-4, 页码: 372-382 作者:  Cui, X (Cui, Xu) [1] , [2] , [3];  Cui, JW (Cui, Jiang-Wei) [1] , [2] , [3];  Zheng, QW (Zheng, Qi-Wen) [1] , [2] , [3];  Wei, Y (Wei, Ying) [1] , [2] , [3];  Li, YD (Li, Yu-Dong) [1] , [2] , [3] 收藏  |  浏览/下载：17/0  |  提交时间：2022/06/21 FinFET  1/f noise  TlD  CVS  bias dependence   Impact of High TID Irradiation on Stability of 65 nm SRAM Cells 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 卷号: 69, 期号: 5, 页码: 1044-1050 作者:  Cui, JW (Cui, Jiangwei) [1];  Zheng, QW (Zheng, Qiwen) [1];  Li, YD (Li, Yudong) [1];  Guo, Q (Guo, Qi) [1] 收藏  |  浏览/下载：17/0  |  提交时间：2022/06/21 SRAM cells  Radiation effects  Arrays  Stability criteria  Circuit stability  Voltage measurement  Logic gates  Stability  static random-access memory (SRAM) cell  total ionizing dose (TID)   Total Ionizing Dose Effects of the Color Complementary Metal Oxide Semiconductor (CMOS) Image Sensor at Different Bias 期刊论文 JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2022, 卷号: 17, 期号: 1, 页码: 121-127 作者:  Yang, ZK (Yang, Zhikang) [1] , [2];  Wen, L (Wen, Lin) [1];  Li, YD (Li, Yudong) [1];  Liu, BK (Liu, Bingkai) [1] , [2];  Fu, J (Fu, Jing) [1] , [2] 收藏  |  浏览/下载：21/0  |  提交时间：2022/06/21 Color CMOS Image Sensor  Radiation Damage  Total Ionizing Dose Effects  Bias Condition