Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices

doi:10.3389/fmats.2022.1010049

	Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices
	Lu, Guangbao 1,2; Liu, Jun 1,2; Zheng, Qirong 1,2; Li, Yonggang 1,2
刊名	FRONTIERS IN MATERIALS
	2022-09-28
卷号	9
关键词	total ionizing dose effect dynamic modeling doubly-hydrogenated oxygen vacancy microscopic mechanism MOS devices
ISSN号	2296-8016
DOI	10.3389/fmats.2022.1010049
通讯作者	Li, Yonggang(ygli@theory.issp.ac.cn)
英文摘要	The total ionizing dose (TID) effect is one of the main causes of the performance degradation/failure of semiconductor devices under high-energy gamma-ray irradiation. In special, the concentration of doubly-hydrogenated oxygen vacancy (a case study of Vo gamma H2) in the oxide layer seriously exacerbates the TID effect. Therefore, we developed a dynamic model of mobile particles and fixed defects by solving the rate equations and Poisson's equation simultaneously, to reveal the contribution and influence mechanisms of Vo gamma H2 on the TID effect of MOS devices. We found that Vo gamma H2 can directly and indirectly promote the formation of V-o gamma(+) and Vo gamma H+ , respectively, which can increase the electric field near the Si/SiO2 interface and reduce the threshold voltage of silicon MOS devices accordingly. Controlling Vo gamma H2 with a concentration below 10(14) cm(-3) can suppress the adverse TID effects. The results are much helpful for analyzing the microscopic mechanisms of the TID effect and designing new MOS devices with high radiation-hardening.
资助项目	National Natural Science Foundation of China[11975018] ; National MCF Energy RD Program[2018YEF0308100] ; Outstanding member of Youth Innovation Promotion Association CAS[Y202087] ; Tianhe-2JK computing time award of the Beijing Computational Science Research Center (CSRC)
WOS关键词	X-RAY IRRADIATIONS ; CHARGE ; MECHANISMS ; CENTERS ; SIMULATION ; SI-SIO2 ; DEFECTS
WOS研究方向	Materials Science
语种	英语
出版者	FRONTIERS MEDIA SA
WOS记录号	WOS:000869089400001
资助机构	National Natural Science Foundation of China ; National MCF Energy RD Program ; Outstanding member of Youth Innovation Promotion Association CAS ; Tianhe-2JK computing time award of the Beijing Computational Science Research Center (CSRC)
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/129789]
专题	中国科学院合肥物质科学研究院
通讯作者	Li, Yonggang
作者单位	1.Univ Sci & Technol China, Hefei, Peoples R China 2.Chinese Acad Sci, HFIPS, Inst Solid State Phys, Key Lab Mat Phys, Hefei, Peoples R China
推荐引用方式 GB/T 7714	Lu, Guangbao,Liu, Jun,Zheng, Qirong,et al. Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices[J]. FRONTIERS IN MATERIALS,2022,9.
APA	Lu, Guangbao,Liu, Jun,Zheng, Qirong,&Li, Yonggang.(2022).Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices.FRONTIERS IN MATERIALS,9.
MLA	Lu, Guangbao,et al."Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices".FRONTIERS IN MATERIALS 9(2022).