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Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices 期刊论文
FRONTIERS IN MATERIALS, 2022, 卷号: 9
作者:  Lu, Guangbao;  Liu, Jun;  Zheng, Qirong;  Li, Yonggang
收藏  |  浏览/下载：15/0  |  提交时间：2022/12/23
Synergistic effects of total ionizing dose and radiated electromagnetic interference on analog-to-digital converter 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2022, 卷号: 33, 期号: 3, 页码: 1-9
作者:  Wu, P (Wu, Ping) [1] , [2];  Wen, L (Wen, Lin) [3] , [4];  Xu, ZQ (Xu, Zhi-Qian) [1] , [2];  Jiang, YS (Jiang, Yun-Sheng) [1] , [2];  Guo, Q (Guo, Qi) [3] , [4]
收藏  |  浏览/下载：18/0  |  提交时间：2022/04/07
Bias dependence of total ionizing dose effects in 22 nm bulk nFinFETs 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2022, 卷号: 177, 期号: 3-4, 页码: 372-382
作者:  Cui, X (Cui, Xu) [1] , [2] , [3];  Cui, JW (Cui, Jiang-Wei) [1] , [2] , [3];  Zheng, QW (Zheng, Qi-Wen) [1] , [2] , [3];  Wei, Y (Wei, Ying) [1] , [2] , [3];  Li, YD (Li, Yu-Dong) [1] , [2] , [3]
收藏  |  浏览/下载：14/0  |  提交时间：2022/06/21
Impact of High TID Irradiation on Stability of 65 nm SRAM Cells 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2022, 卷号: 69, 期号: 5, 页码: 1044-1050
作者:  Cui, JW (Cui, Jiangwei) [1];  Zheng, QW (Zheng, Qiwen) [1];  Li, YD (Li, Yudong) [1];  Guo, Q (Guo, Qi) [1]
收藏  |  浏览/下载：17/0  |  提交时间：2022/06/21
Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier 期刊论文
AIP ADVANCES, 2021, 卷号: 11, 期号: 5, 页码: 1-6
作者:  Xiang, CAF (Xiang, Chuanfeng) 1 , 2;  Yao, S (Yao, Shuai) 1 , 3;  Lu, W (Lu, Wu) 1 , 2;  Li, XL (Li, Xiaolong) 1;  Yu, X (Yu, Xin) 1
收藏  |  浏览/下载：32/0  |  提交时间：2021/08/06
Radiation Effects and Mechanisms on Switching Characteristics of Silicon Carbide Power MOSFETs 期刊论文
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2021, 卷号: 16, 期号: 9, 页码: 1423-1429
作者:  Feng, HN (Feng, Haonan) [1] , [2] , [3];  Yang, S (Yang, Sheng) [1] , [2] , [3];  Liang, XW (Liang, Xiaowen) [1] , [2] , [3];  Zhang, D (Zhang, Dan) [1] , [2] , [3];  Pu, XJ (Pu, Xiaojuan) [1] , [2] , [3]
收藏  |  浏览/下载：38/0  |  提交时间：2022/03/24
TID Response and Radiation-Enhanced Hot-Carrier Degradation in 65-nm nMOSFETs: Concerns on the Layout-Dependent Effects 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 8, 页码: 1565-1570
作者:  Ren, ZX (Ren, Zhexuan);  1An, X (An, Xia) 1;  Li, GS (Li, Gensong) 1;  Liu, JY (Liu, Jingyi) 1;  Xun, MZ (Xun, Mingzhu) 2
收藏  |  浏览/下载：33/0  |  提交时间：2021/09/22
The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs 期刊论文
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2020, 卷号: 175, 期号: 5-6, 页码: 551-558
作者:  Xi, SX (Xi, Shan-Xue)[ 1,2,3 ];  Zheng, QW (Zheng, Qi-Wen)[ 1,2 ];  Lu, W (Lu, Wu)[ 1,2 ];  Cui, JW (Cui, Jiang-Wei)[ 1,2 ];  Wei, Y (Wei, Ying)[ 1,2 ]
收藏  |  浏览/下载：22/0  |  提交时间：2020/07/06
TID Response of Bulk Si PMOS FinFETs: Bias, Fin Width, and Orientation Dependence 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 7, 页码: 1320-1325
作者:  Ren, ZX (Ren, Zhexuan)[ 1 ];  An, X (An, Xia)[ 1 ];  Li, GS (Li, Gensong)[ 1 ];  Chen, G (Chen, Gong)[ 1 ];  Li, M (Li, Ming)[ 1 ]
收藏  |  浏览/下载：35/0  |  提交时间：2020/09/09
130nm部分耗尽绝缘体上硅工艺晶体管总剂量效应及模型研究 学位论文
中国科学院新疆理化技术研究所: 中国科学院大学, 2019
作者:  席善学
收藏  |  浏览/下载：12/0  |  提交时间：2019/07/15

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