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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：65/4  |  提交时间：2011/07/05
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG
收藏  |  浏览/下载：26/0  |  提交时间：2012/01/06
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载：81/5  |  提交时间：2011/07/05
Stretchable Graphene: A Close Look at Fundamental Parameters through Biaxial Straining 期刊论文
nano letters, 2010, 卷号: 10, 期号: 9, 页码: 3453-3458
Ding F (Ding Fei); Ji HX (Ji Hengxing); Chen YH (Chen Yonghai); Herklotz A (Herklotz Andreas); Dorr K (Doerr Kathrin); Mei YF (Mei Yongfeng); Rastelli A (Rastelli Armando); Schmidt OG (Schmidt Oliver G.)
收藏  |  浏览/下载：243/38  |  提交时间：2010/09/20
Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 10, 页码: art. no. 103108
作者:  Xu B;  Ye XL
收藏  |  浏览/下载：68/0  |  提交时间：2010/03/08
Chemical etching of a GaSb crystal incorporated with Mn grown by the Bridgman method under microgravity conditions 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 8, 页码: 47-51
Chen Xiaofeng; Chen Nuofu; Wu Jinliang; Zhang Xiulan; Chai Chunlin; Yu Yude
收藏  |  浏览/下载：19/0  |  提交时间：2010/11/23
Comparison and combination of several stress relief methods for cubic boron nitride films deposited by ion beam assisted deposition 期刊论文
surface & coatings technology, 2009, 卷号: 203, 期号: 10-11, 页码: 1452-1456
作者:  Tan HR;  Zhang XW;  You JB;  Fan YM
收藏  |  浏览/下载：262/33  |  提交时间：2010/03/08
Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films 期刊论文
thin solid films, 2009, 卷号: 517, 期号: 6, 页码: 1989-1994
作者:  Li Y
收藏  |  浏览/下载：359/38  |  提交时间：2010/03/08
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD
收藏  |  浏览/下载：65/3  |  提交时间：2010/03/08

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