Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films

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	Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films
	Li Y
刊名	thin solid films
	2009
卷号	517 期号:6 页码:1989-1994
关键词	Bulge test Fracture property Silicon nitride Weibull distribution function
ISSN号	0040-6090
通讯作者	yang jl chinese acad sci inst semicond qinghua donglu a 35 beijing 100083 peoples r china. e-mail address: jlyang@semi.ac.cn
中文摘要	the mechanical properties and fracture behavior of silicon nitride (sinx) thin film fabricated by plasma-enhanced chemical vapor deposition is reported. plane-strain moduli, prestresses, and fracture strengths of silicon nitride thin film; deposited both oil a bare si substrate and oil a thermally oxidized si substrate were extracted using bulge testing combined with a refined load-deflection model of long rectangular membranes. the plane-strain modu i and prestresses of sinx thin films have little dependence on the substrates, that is, for the bare si substrate, they are 133 +/- 19 gpa and 178 +/- 22 mpa, respectively, while for the thermally oxidized substrate, they are 140 +/- 26 gila and 194 +/- 34 mpa, respectively. however, the fracture strength values of sinx films grown on the two substrates are quite different, i.e., 1.53 +/- 0.33 gila and 3.08 +/- 0.79 gpa for the bare si substrate a a the oxidized si substrate, respectively. the reference stresses were computed by integrating the local stress of the membrane at the fracture over the edge, surface, and volume of the specimens and fitted with the weibull distribution function. for sinx thin film produced oil the bare si substrate, the volume integration gave a significantly better agreement between data and model, implying that the volume flaws re the dominant fracture origin. for sinx thin film grown on the oxidized si substrate, the fit quality of surface and edge integration was significantly better than the volume integration, and the dominant surface and edge flaws could be caused by buffered hf attacking the sinx layer during sio2 removal. crown copyright (c) 2008 published by elsevier b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
资助信息	chinese academy of sciences most "863 program" 2007aa04z322 this project is supported by the "hundred talents plan" (j.l.. yang) of chinese academy of sciences and the most "863 program" (2007aa04z322) of china. the authors are deeply grateful to prof. oliver paul of freiburg university for helpful discussion on the refined analytical model.
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7373]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li Y. Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films[J]. thin solid films,2009,517(6):1989-1994.
APA	Li Y.(2009).Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films.thin solid films,517(6),1989-1994.
MLA	Li Y."Bulge testing and fracture properties of plasma-enhanced chemical vapor deposited silicon nitride thin films".thin solid films 517.6(2009):1989-1994.