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CORC

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Intersubband absorption properties of high al content alxga1?xn/gan multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition 期刊论文
Nanoscale research letters, 2012, 卷号: 7, 期号: 1
作者:  Sun,He Hui;  Guo,Feng Yun;  Li,Deng Yue;  Wang,Lu;  Wang,Dong Bo
收藏  |  浏览/下载：35/0  |  提交时间：2019/05/09
Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 111, 期号: 1
作者:  Huang, CC;  Xu, FJ;  Song, J;  Xu, ZY;  Wang, JM
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/18
Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Films Grown with Different Interlayers 期刊论文
CHINESE PHYSICS LETTERS, 2012, 卷号: 29, 期号: 9
Sun, HH; Guo, FY; Li, DY; Wang, L; Zhao, DG; Zhao, LC
收藏  |  浏览/下载：20/0  |  提交时间：2013/09/17
Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition 期刊论文
NANOSCALE RESEARCH LETTERS, 2012, 卷号: 7, 页码: 1
Sun, HH; Guo, FY; Li, DY; Wang, L; Wang, DB; Zhao, LC
收藏  |  浏览/下载：31/0  |  提交时间：2013/09/18
Effect of high temperature algan buffer thickness on gan epilayer grown on si(111) substrates 期刊论文
Journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Wei, Meng;  Wang, Xiaoliang;  Pan, Xu;  Xiao, Hongling;  Wang, Cuimei
收藏  |  浏览/下载：22/0  |  提交时间：2019/05/12
Growth of 2 mu m crack-free gan on si(111) substrates by metal organic chemical vapor deposition 期刊论文
Chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: 4
作者:  Wei Meng;  Wang Xiao-Liang;  Xiao Hong-Ling;  Wang Cui-Mei;  Pan Xu
收藏  |  浏览/下载：30/0  |  提交时间：2019/05/12
Growth of 2 mu m Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.48102
作者:  Pan X;  Hou QF
收藏  |  浏览/下载：83/7  |  提交时间：2011/07/05
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Influence of Cr-doping on microstructure and piezoelectric response of AlN films 期刊论文
2010, 2010
Luo, J. T.; Fan, B.; Zeng, F.; Pan, F.
收藏  |  浏览/下载：3/0
Effects of algan/aln stacked interlayers on gan growth on si (111) 期刊论文
Chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: 3
作者:  Wang Hui;  Liang Hu;  Wang Yong;  Ng Kar-Wei;  Deng Dong-Mei
收藏  |  浏览/下载：17/0  |  提交时间：2019/05/12

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