Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition

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	Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition
	Sun, HH ; Guo, FY ; Li, DY ; Wang, L ; Wang, DB ; Zhao, LC
刊名	NANOSCALE RESEARCH LETTERS
	2012
卷号	7 页码:1
关键词	MU-M STRAIN RELAXATION WAVELENGTH RANGE GAN/ALGAN SUPERLATTICES GAN TRANSITIONS DISLOCATIONS ALN/GAN MOCVD
ISSN号	1931-7573
通讯作者	Sun, HH: Harbin Inst Technol, Dept Informat Mat Sci & Technol, Harbin 150001, Peoples R China.
中文摘要	High Al content Al (x) Ga1-x N/GaN multiple quantum well (MQW) films with different interlayers were grown by metal organic chemical vapor deposition. These MQWs were designed to achieve intersubband (ISB) absorption in the mid-infrared spectral range. We have considered two growth conditions, with AlGaN interlayer and GaN/AlN superlattice (SL) interlayer, both deposited on GaN-on-sapphire templates. Atomic force microscopy images show a relatively rough surface with atomic-step terraces and surface depression, mainly dominated by dislocations. High-resolution X-ray diffraction and transmission electron microscopy analyses indicate that good crystalline quality of the AlGaN/GaN MQW layer could be achieved when the AlGaN interlayer is inserted. The ISB absorption with a peak at 3.7 mu m was demonstrated in MQW films with AlGaN interlayer. However, we have not observed the infrared absorption in MQW films with GaN/AlN SL interlayer. It is believed that the high dislocation density and weaker polarization that resulted from the rough interface are determinant factors of vanished ISB absorption for MQW films with the GaN/AlN SL interlayer.
收录类别	SCI
资助信息	Heilongjiang Province's Nature Science Foundation of China [F2007-1]; Beijing Institute of Technology [BJUT-GTS-200904]
语种	英语
公开日期	2013-09-18
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/40192]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Sun, HH,Guo, FY,Li, DY,et al. Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition[J]. NANOSCALE RESEARCH LETTERS,2012,7:1.
APA	Sun, HH,Guo, FY,Li, DY,Wang, L,Wang, DB,&Zhao, LC.(2012).Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition.NANOSCALE RESEARCH LETTERS,7,1.
MLA	Sun, HH,et al."Intersubband absorption properties of high Al content AlxGa1-xN/GaN multiple quantum wells grown with different interlayers by metal organic chemical vapor deposition".NANOSCALE RESEARCH LETTERS 7(2012):1.