Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer

	Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer
	Pan X
刊名	journal of crystal growth
	2011
卷号	318 期号:1 页码:464-467
关键词	Sandwich structure Stress Aluminum nitride Gallium nitride Silicon PHONON DEFORMATION POTENTIALS WURTZITE ALN SILICON STRESS TRANSISTORS EPITAXY LAYERS
ISSN号	0022-0248
通讯作者	pan, x, chinese acad sci, inst semicond, ctr mat sci, beijing 100864, peoples r china. xpan@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	a single high temperature aln (ht-aln) buffer has been used to relieve the stress in the growth of gan epilayers on si (1 1 1) substrates, but the growth of crack-free gan on si is still difficult due to the large mismatch of the lattice and coefficient of thermal-expansion (cte) between gan and si. in this paper, we report the growth of 1.2 mu m thick crack-free gan epilayers on 2 in. si (1 1 1) substrates using the aln sandwich structure as a buffer. the surface morphologies of the samples were observed using a microscope and afm. further analysis shows that the crack-free sample is closely correlated to the introduction of the aln sandwich structure as the buffer. to better understand the relationship between the cracks and the stress, raman scattering has been used to study the stress in the samples. the results indicate that the sandwich structure with top aln and bottom aln can more effectively accommodate the strain energy caused by cte mismatch stress. (c) 2010 elsevier b.v. all rights reserved.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20811]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Pan X. Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer[J]. journal of crystal growth,2011,318(1):464-467.
APA	Pan X.(2011).Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer.journal of crystal growth,318(1),464-467.
MLA	Pan X."Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer".journal of crystal growth 318.1(2011):464-467.