Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry

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	Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry
	Xu B; Ye XL
刊名	journal of applied physics
	2009
卷号	105 期号:10 页码:art. no. 103108
关键词	aluminium compounds gallium arsenide III-V semiconductors internal stresses reflectivity semiconductor heterojunctions semiconductor quantum wells
ISSN号	0021-8979
通讯作者	chen yh chinese acad sci inst semicond key lab semicond mat sci pob 912 beijing 100083 peoples r china. e-mail address: yhchen@red.semi.ac.cn
中文摘要	the well-width dependence of in-plane optical anisotropy (ipoa) in (001) gaas/alxga1-xas quantum wells induced by in-plane uniaxial strain and interface asymmetry has been studied comprehensively. theoretical calculations show that the ipoa induced by in-plane uniaxial strain and interface asymmetry exhibits much different well-width dependence. the strain-induced ipoa is inversely proportional to the energy spacing between heavy- and light-hole subbands, so it increases with the well width. however, the interface-related ipoa is mainly determined by the probability that the heavy- and light-holes appear at the interfaces, so it decreases with the well width. reflectance difference spectroscopy has been carried out to measure the ipoa of (001) gaas/alxga1-xas quantum wells with different well widths. strain- and interface-induced ipoa have been distinguished by using a stress apparatus, and good agreement with the theoretical prediction is obtained. the anisotropic interface potential parameters are also determined. in addition, the energy shift between the interface- and strain-induced 1h1e reflectance difference (rd) structures, and the deviation of the 1l1e rd signal away from the prediction of the calculation model have been discussed.
学科主题	半导体材料
收录类别	SCI
资助信息	973 program 2006cb604908 2006cb921607 national natural science foundation of china 60625402 the work was supported by the 973 program (contract nos. 2006cb604908 and 2006cb921607), and the national natural science foundation of china (grant no. 60625402).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7153]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu B,Ye XL. Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry[J]. journal of applied physics,2009,105(10):art. no. 103108.
APA	Xu B,&Ye XL.(2009).Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry.journal of applied physics,105(10),art. no. 103108.
MLA	Xu B,et al."Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry".journal of applied physics 105.10(2009):art. no. 103108.