Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)

	Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)
	Wei, M ; Wang, XL ; Pan, X ; Xiao, HL ; Wang, CM ; Hou, QF ; Wang, ZG
刊名	materials science in semiconductor processing
	2011
卷号	14 期号:2 页码:97-100
关键词	GaN MOCVD Si(111) AlN VAPOR-PHASE EPITAXY LAYERS SUBSTRATE MOCVD STRESS
ISSN号	1369-8001
通讯作者	wei, m (reprint author), chinese acad sci, inst semicond, mat sci ctr, pob 912, beijing 100083, peoples r china，mengw@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	knowledge innovation engineering of chinese academy of sciences[yyyj-0701-02]; national nature sciences foundation of china[60890193, 60906006]; state key development program for basic research of china[2006cb604905, 2010cb327503]; chinese academy of sciences[iscas2008t01, iscas2009l01, iscas2009l02]
语种	英语
公开日期	2012-01-06
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/22655]
专题	半导体研究所_半导体材料科学中心
推荐引用方式 GB/T 7714	Wei, M,Wang, XL,Pan, X,et al. Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)[J]. materials science in semiconductor processing,2011,14(2):97-100.
APA	Wei, M.,Wang, XL.,Pan, X.,Xiao, HL.,Wang, CM.,...&Wang, ZG.(2011).Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1).materials science in semiconductor processing,14(2),97-100.
MLA	Wei, M,et al."Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1)".materials science in semiconductor processing 14.2(2011):97-100.