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A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates
期刊论文
Vacuum, 2022, 卷号: 201
作者:
Wang, Xiaoye
;
Bai, Xue
;
Yang, Xiaoguang
;
Du, Wenna
;
Yang, Tao
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2022/06/20
Crystal defects
Gallium alloys
III-V semiconductors
Indium alloys
Metallorganic chemical vapor deposition
Morphology
Nanowires
Semiconducting indium gallium arsenide
Semiconductor alloys
Silicon
Substrates
Growth morphology
High-temperature annealing
Inas nanowire
Metal-organic chemical vapour depositions
Optimisations
Parasitic island
Parasitics
Si substrates
Substrate surface
Treatment methods
Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure
期刊论文
CHINESE OPTICS LETTERS, 2018, 卷号: 16
作者:
Jia, Yan
;
Yu, Qingnan
;
Li, Fang
;
Wang, Mingqing
;
Lu, Wei
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/12/30
Gallium compounds
III-V semiconductors
Indium
Indium alloys
Optical pumping
Quantum well lasers
Semiconducting indium gallium arsenide
Semiconductor alloys
Semiconductor quantum wells
Strain
Edge-emitting device
Experimental investigations
Gain characteristic
Material growth
Multiple wavelengths
Photoluminescence spectrum
Quantum well structures
Strain configurations
Gallium alloys
非真空纳米粒子墨水法制备CIGS薄膜太阳电池吸收层
学位论文
2017, 2015
崔鑫
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  |  
浏览/下载:6/0
  |  
提交时间:2017/06/20
铜铟镓硒 纳米粒子 非真空
CIGS
Nanoparticles
Non-vaccum
Low temperature, solution-processed ambipolar field-effect transistors based on polymer/self-assembled monolayer modified InOxhybrid structures for balanced hole and electron mobilities exceeding 1 cm2V−1s−1 (EI收录)
期刊论文
Organic Electronics: physics, materials, applications, 2017, 卷号: 43, 页码: 162-166
作者:
Sun, Sheng[1]
;
Li, Yuzhi[1]
;
Lan, Linfeng[1]
;
Xiao, Peng[1]
;
Chen, Zhenhui[1]
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/04/24
Amorphous films
CMOS integrated circuits
Conjugated polymers
Electron mobility
Energy gap
Indium
Metals
Monolayers
MOS devices
Organic polymers
Oxide semiconductors
Self assembled monolayers
Semiconducting indium
Temperature
Transistors
Bias-dependent timing jitter of 1-GHz sinusoidally gated InGaAs/InP avalanche photodiode
期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 11
作者:
Zhu, Ge
;
Zheng, Fu
;
Wang, Chao
;
Sun, Zhibin
;
Zhai, Guangjie
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2016/12/29
Avalanche photodiodes
Bias voltage
Particle beams
Photodetectors
Photodiodes
Photons
Reconfigurable hardware
Semiconducting indium
Timing circuits
Timing jitter
Influence of in content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes (EI收录)
期刊论文
Journal of Physics D: Applied Physics, 2016, 卷号: 49
作者:
Lin, Zhiting[1,2]
;
Wang, Haiyan[1,2]
;
Lin, Yunhao[1,2]
;
Yang, Meijuan[1,2]
;
Wang, Wenliang[1,2]
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/04/24
Carrier concentration
Crystalline materials
Diodes
Efficiency
Gallium alloys
Gallium nitride
Quantum efficiency
Semiconducting indium compounds
Semiconductor quantum wells
Effect of post treatment for cu-cr source/drain electrodes on a-igzo tfts (EI收录)
期刊论文
Materials, 2016, 卷号: 9, 页码: 1-5
作者:
Hu, Shiben[1]
;
Fang, Zhiqiang[1]
;
Ning, Honglong[1]
;
Tao, Ruiqiang[1]
;
Liu, Xianzhe[1]
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2019/04/24
Amorphous films
Amorphous semiconductors
Carrier concentration
Copper
Copper alloys
Electrodes
Gallium alloys
Indium
Indium alloys
Interfaces (materials)
Semiconducting indium compounds
Semiconductor materials
Abnormal InGaN growth behavior in indium-desorption regime in metalorganic chemical vapor deposition
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2015, 卷号: 409, 期号: 0, 页码: 51-55
作者:
Zhou, K(周堃)
;
Ikeda, M
;
Liu, JP(刘建平)
;
Zhang, SM(张书明)
;
Li, ZC(李增成)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2015/02/03
Growth models
Metalorganic vapor phase epitaxy
Nitrides
Semiconducting III-V materials
Growth of In As nanowires with the morphology and crystal structure controlled by carrier gas flow rate
期刊论文
JOURNAL OF CRYSTAL GROWTH, 2015
Li, Ming
;
Wang, Jingyun
;
Li, Kan
;
Xing, Yingjie
;
Xu, H. Q.
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
Crystal morphology
Low dimensional structures
Nanostructures
Growth from vapor
Nanomaterials
Semiconducting III-V material
III-V NANOWIRES
INAS NANOWIRES
SEMICONDUCTOR NANOWIRES
SUPERLATTICES
SUPERCURRENT
SILICON
SI(111)
INDIUM
MOVPE
GAAS
Method for Fabricating Amorphous Indium-Zinc-Oxide Thin-Film Transistors With Copper Source and Drain Electrodes (EI收录)
期刊论文
IEEE Electron Device Letters, 2015, 卷号: 36, 页码: 342-344
作者:
Zhao, Mingjie[1]
;
Xu, Miao[2]
;
Ning, Honglong[1]
;
Xu, Ruixia[3]
;
Zou, Jianhua[1]
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/04/25
Amorphous films
Copper
Electrodes
Indium
Semiconducting organic compounds
Thin films
Threshold voltage
Transistors
Zinc
Zinc oxide
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