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浏览/检索结果: 共6条，第1-6条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Achieving High-Performance Blue GaN-Based Light-Emitting Diodes by Energy Band Modification on AlxInyGa1?x?yN Electron Blocking Layer (EI收录) 期刊论文 IEEE Transactions on Electron Devices, 2017, 卷号: 64, 页码: 472-480 作者:  Lin, Zhiting[1,2];  Wang, Haiyan[1,2];  Chen, Shuqi[1,2];  Lin, Yunhao[1,2];  Yang, Meijuan[1,2] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 Band structure  Band structure  Electric fields  Electric fields  Gallium alloys  Gallium alloys  Gallium nitride  Gallium nitride  Polarization  Polarization   GaN-based light-emitting diodes on various substrates: a critical review 期刊论文 REPORTS ON PROGRESS IN PHYSICS, 2016, 卷号: 79 作者:  Li, Guoqiang[1,2,3];  Wang, Wenliang[1,2];  Yang, Weijia[1,2];  Lin, Yunhao[1,2];  Wang, Haiyan[1,2] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24 GaN  light-emitting diodes  substrates  crystalline defects  nonpolar   Influence of in content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes (EI收录) 期刊论文 Journal of Physics D: Applied Physics, 2016, 卷号: 49 作者:  Lin, Zhiting[1,2];  Wang, Haiyan[1,2];  Lin, Yunhao[1,2];  Yang, Meijuan[1,2];  Wang, Wenliang[1,2] 收藏  |  浏览/下载：13/0  |  提交时间：2019/04/24 Carrier concentration  Crystalline materials  Diodes  Efficiency  Gallium alloys  Gallium nitride  Quantum efficiency  Semiconducting indium compounds  Semiconductor quantum wells   Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition (EI收录) 期刊论文 Applied Surface Science, 2016, 卷号: 369, 页码: 414-421 作者:  Wang, Haiyan[1,2];  Wang, Wenliang[1,2];  Yang, Weijia[1,2];  Zhu, Yunnong[1,2];  Lin, Zhiting[1,2] 收藏  |  浏览/下载：6/0  |  提交时间：2019/04/24 Atomic force microscopy  Crystalline materials  Deposition  Epitaxial films  Gallium nitride  Microstructure  Pulsed laser deposition  Pulsed lasers  Surface roughness   Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth (EI收录) 期刊论文 Journal of Materials Chemistry C, 2015, 卷号: 3, 页码: 1484-1490 作者:  Lin, Yunhao[1];  Zhou, Shizhong[1];  Wang, Wenliang[1];  Yang, Weijia[1];  Qian, Huirong[1] 收藏  |  浏览/下载：8/0  |  提交时间：2019/04/25 Gallium nitride  Light emitting diodes  Metallorganic chemical vapor deposition  Nucleation  Organic chemicals  Organometallics  Silicon  Substrates  Transmission electron microscopy  X ray diffraction   Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition (EI收录) 期刊论文 Journal of Applied Physics, 2015, 卷号: 117 作者:  Wang, Haiyan[1];  Wang, Wenliang[1];  Yang, Weijia[1];  Zhou, Shizhong[1];  Lin, Zhiting[1] 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/25 Aluminum nitride  Deposition  Film growth  Morphology  Pulsed laser deposition  Pulsed lasers  Silicon  Substrates  Surface morphology  Surface roughness