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	Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition (EI收录)
	Wang, Haiyan[1]; Wang, Wenliang[1]; Yang, Weijia[1]; Zhou, Shizhong[1]; Lin, Zhiting[1]; Li, Guoqiang[1,2]
刊名	Journal of Applied Physics
	2015
卷号	117
关键词	Aluminum nitride Deposition Film growth Morphology Pulsed laser deposition Pulsed lasers Silicon Substrates Surface morphology Surface roughness
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2211897
专题	华南理工大学
作者单位	1.[1] State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China 2.[2] Department of Electronic Materials, South China University of Technology, Guangzhou, China
推荐引用方式 GB/T 7714	Wang, Haiyan[1],Wang, Wenliang[1],Yang, Weijia[1],等. Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition (EI收录)[J]. Journal of Applied Physics,2015,117.
APA	Wang, Haiyan[1],Wang, Wenliang[1],Yang, Weijia[1],Zhou, Shizhong[1],Lin, Zhiting[1],&Li, Guoqiang[1,2].(2015).Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition (EI收录).Journal of Applied Physics,117.
MLA	Wang, Haiyan[1],et al."Growth evolution of AlN films on silicon (111) substrates by pulsed laser deposition (EI收录)".Journal of Applied Physics 117(2015).

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