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	GaN-based light-emitting diodes on various substrates: a critical review
	Li, Guoqiang[1,2,3]; Wang, Wenliang[1,2]; Yang, Weijia[1,2]; Lin, Yunhao[1,2]; Wang, Haiyan[1,2]; Lin, Zhiting[1,2]; Zhou, Shizhong[1,2]
刊名	REPORTS ON PROGRESS IN PHYSICS
	2016
卷号	79
关键词	GaN light-emitting diodes substrates crystalline defects nonpolar
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2195379
专题	华南理工大学
作者单位	1.[1]S China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510640, Guangdong, Peoples R China 2.[2]Engn Res Ctr Solid State Lighting & Its Informati, Guangzhou 510640, Guangdong, Peoples R China 3.[3]S China Univ Technol, Sch Mat Sci & Engn, Dept Elect Mat, Guangzhou 510640, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Li, Guoqiang[1,2,3],Wang, Wenliang[1,2],Yang, Weijia[1,2],et al. GaN-based light-emitting diodes on various substrates: a critical review[J]. REPORTS ON PROGRESS IN PHYSICS,2016,79.
APA	Li, Guoqiang[1,2,3].,Wang, Wenliang[1,2].,Yang, Weijia[1,2].,Lin, Yunhao[1,2].,Wang, Haiyan[1,2].,...&Zhou, Shizhong[1,2].(2016).GaN-based light-emitting diodes on various substrates: a critical review.REPORTS ON PROGRESS IN PHYSICS,79.
MLA	Li, Guoqiang[1,2,3],et al."GaN-based light-emitting diodes on various substrates: a critical review".REPORTS ON PROGRESS IN PHYSICS 79(2016).

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