CORC

浏览/检索结果: 共73条,第1-10条 帮助

已选(0)清除 条数/页:   排序方式:
A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates 期刊论文
Vacuum, 2022, 卷号: 201
作者:  Wang, Xiaoye;  Bai, Xue;  Yang, Xiaoguang;  Du, Wenna;  Yang, Tao
收藏  |  浏览/下载:14/0  |  提交时间:2022/06/20
A theoretical and experimental study on effect of growth time on self-catalyzed InAs nanowires 期刊论文
Applied Surface Science, 2020, 卷号: 518
作者:  Wang, Xiaoye;  Bai, Xue;  Yang, Xiaoguang;  Liu, Xiaoming;  Du, Wenna
收藏  |  浏览/下载:4/0  |  提交时间:2022/02/17
A theoretical and experimental study on effect of growth time on self-catalyzed InAs nanowires 会议论文
作者:  Wang, Xiaoye;  Bai, Xue;  Yang, Xiaoguang;  Liu, Xiaoming;  Du, Wenna
收藏  |  浏览/下载:3/0  |  提交时间:2020/12/18
Growth of high-quality AlGaN epitaxial films on Si substrates (EI收录) 期刊论文
Materials Letters, 2017, 卷号: 207, 页码: 133-136
作者:  Li, Yuan[1,2];  Wang, Wenliang[1,2,3];  Lin, Yunhao[1,2];  Li, Xiaochan[1,2];  Huang, Liegen[1,2]
收藏  |  浏览/下载:117/0  |  提交时间:2019/04/24
Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon 期刊论文
NANOSCALE RESEARCH LETTERS, 2015, 卷号: 10, 页码: 1—5
作者:  Song, SN;  Yao, DN;  Song, ZT;  Gao, LN;  Zhang, ZH
收藏  |  浏览/下载:16/0  |  提交时间:2015/12/09
Performance improvement of GaN-based light-emitting diodes grown on Si(111) substrates by controlling the reactor pressure for the GaN nucleation layer growth (EI收录) 期刊论文
Journal of Materials Chemistry C, 2015, 卷号: 3, 页码: 1484-1490
作者:  Lin, Yunhao[1];  Zhou, Shizhong[1];  Wang, Wenliang[1];  Yang, Weijia[1];  Qian, Huirong[1]
收藏  |  浏览/下载:8/0  |  提交时间:2019/04/25
Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition 期刊论文
http://dx.doi.org/10.1016/j.tsf.2012.05.038, 2013
Feng, Zhe Chuan; Zhu, Li-Hong; Kuo, Ting-Wei; Wu, C.-Y.; Tsai, Hong-Ling; Liu, Bao-Lin; Yang, Jer-Ren; 刘宝林; 朱丽虹
收藏  |  浏览/下载:3/0  |  提交时间:2015/07/22
Improved quantum efficiency in semipolar (1101) InGaN/GaN quantum wells grown on gan prepared by lateral epitaxial overgrowth 期刊论文
http://dx.doi.org/10.1109/TED.2013.2282233, 2013
Zhu, Lihong; Zeng, Fanming; Liu, Wei; Feng, Zhechuan; Liu, Baolin; Lu, Yijun; Gao, Yulin; Chen, Zhong; 朱丽虹; 陈忠
收藏  |  浏览/下载:3/0  |  提交时间:2015/07/22
X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures 期刊论文
http://dx.doi.org/10.1088/1674-4926/32/4/043006, 2011
Wang, Yuanzha; Li, Jinchai; Li, Shuping; Chen, Hangyang; Liu, Dayi; Kang, Junyong; 王元樟; 李金钗; 李书平; 陈航洋; 刘达艺; 康俊勇
收藏  |  浏览/下载:2/0  |  提交时间:2015/07/22
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载:118/2  |  提交时间:2011/07/05


©版权所有 ©2017 CSpace - Powered by CSpace