A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates

doi:10.1016/j.vacuum.2022.111057

	A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates
	Wang, Xiaoye 2,3,4; Bai, Xue 5,6; Yang, Xiaoguang 1,7; Du, Wenna 8; Yang, Tao 1,7
刊名	Vacuum
	2022-07-01
卷号	201
关键词	Crystal defects Gallium alloys III-V semiconductors Indium alloys Metallorganic chemical vapor deposition Morphology Nanowires Semiconducting indium gallium arsenide Semiconductor alloys Silicon Substrates Growth morphology High-temperature annealing Inas nanowire Metal-organic chemical vapour depositions Optimisations Parasitic island Parasitics Si substrates Substrate surface Treatment methods
ISSN号	0042-207X
DOI	10.1016/j.vacuum.2022.111057
英文摘要	In this work, a series of NWs growths with different treatments for substrate surface have been carried out to study growth morphology optimization for NWs grown on Si substrates. A substrate treatment method of high-temperature annealing combined with thin oxide layer formed on the substrate surface has been developed. It is found that a lot of crystal defects exist in random locations of common substrates surface which make it difficult to grow NWs, but easy to form parasitic islands. XRD and AFM show that high-temperature annealing process can effectively eliminate most of the crystal defects in the substrates, inhibit the formation of parasitic islands. Combined with forming thin natural oxide layer on the substrate surface, the density of InAs NWs can be increased, the growth morphology uniformity of InAs NWs on Si substrates can be improved and parasitic islands are rarely formed on the substrates surface at all. In order to verify the effectiveness and universality of this method, another experiment of InGaAs NWs grown at different temperatures obtained excellent growth results as well. Therefore, this substrate treatment method has good effectiveness, repeatability and universality in optimizing the growth morphology of NWs. © 2022 Elsevier Ltd
语种	英语
出版者	Elsevier Ltd
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/158482]
专题	电气工程与信息工程学院
作者单位	1.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China; 2.College of Electrical and Information Engineering, Lanzhou University of Technology, Lanzhou; 730050, China; 3.Key Laboratory of Gansu Advanced Control for Industrial Processes, Lanzhou University of Technology, Lanzhou; 730050, China; 4.National Demonstration Center for Experimental Electrical and Control Engineering Education, Lanzhou University of Technology, Lanzhou; 730050, China; 5.School of Physical Science and Technology, Lanzhou University, Lanzhou; 730000, China; 6.Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou; 730000, China; 7.Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing; 100083, China; 8.CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing; 100190, China
推荐引用方式 GB/T 7714	Wang, Xiaoye,Bai, Xue,Yang, Xiaoguang,et al. A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates[J]. Vacuum,2022,201.
APA	Wang, Xiaoye,Bai, Xue,Yang, Xiaoguang,Du, Wenna,&Yang, Tao.(2022).A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates.Vacuum,201.
MLA	Wang, Xiaoye,et al."A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates".Vacuum 201(2022).