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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2021     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Pcm-concrete interfacial tensile behavior using nano-sio2 based on splitting-tensile test 期刊论文 Journal of Advanced Concrete Technology, 2021, 卷号: 19, 期号: 4, 页码: 321-334 作者:  Li, Kan;  Wei, Zhiqiang;  Qiao, Hongxia;  Lu, Chenggong;  Theogene, Hakuzweyezu 收藏  |  浏览/下载：2/0  |  提交时间：2022/02/17 Bond strength (materials)  Composite structures  Compressive strength  Concrete mixing  Concrete testing  Hydrated lime  Interface states  Mortar  Nanocomposite films  Polymer films  Semiconducting films  Silica  Silicon  Surface roughness  Tensile testing  Composite specimens  Interface roughness  Interfacial bond strength  Interfacial performance  Interfacial strength  Polymer cement mortars  Splitting tensile tests  Tensile behaviors   The Research of Φ1400mm Sic Mirror for Fabrication, Test and Alignment 会议论文 Chengdu, China, 2021-06-14 作者:  Liangjie, Feng;  Gangyi, Zou;  Pengfei, Cheng;  Renguorui;  Wei, Wang 收藏  |  浏览/下载：14/0  |  提交时间：2022/03/10 SiC mirror  flexure support  light-weighted design  surface distortion   Impact of TID on Within-Wafer Variability of Radiation-Hardened SOI Wafers 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 7, 页码: 1423-1429 作者:  Zheng, QW (Zheng, Qiwen) 1;  Cui, JW (Cui, Jiangwei) 1;  Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1 收藏  |  浏览/下载：40/0  |  提交时间：2021/08/06 Radiation-hardened (RH)silicon-on-insulator (SOI)total ionizing dose (TID)within-wafer variability   Measurement and Evaluation of the Within-Wafer TID Response Variability on BOX Layer of SOI Technology 期刊论文 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 卷号: 68, 期号: 10, 页码: 2516-2523 作者:  Zheng, QW (Zheng, Qiwen) 1Cui, JW (Cui, Jiangwei) 1Yu, XF (Yu, Xuefeng) 1;  Li, YD (Li, Yudong) 1;  Lu, W (Lu, Wu) 1;  He, CF (He, Chengfa) 1;  Guo, Q (Guo, Qi) 1 收藏  |  浏览/下载：40/0  |  提交时间：2021/12/06 Threshold voltage  TestingMOSFET circuits  Transistors  Standards  Logic gates  Fluctuations  Buried oxide (BOX)  silicon-on-insulator (SOI)  total ionizing dose (TID)