×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [12]
兰州理工大学 [1]
北京航空航天大学 [1]
上海微系统与信息技术... [1]
中南林业科技大学 [1]
内容类型
期刊论文 [15]
会议论文 [1]
发表日期
2022 [1]
2018 [1]
2011 [7]
2006 [1]
2004 [1]
2002 [1]
更多...
学科主题
半导体材料 [4]
半导体物理 [4]
Chemistry,... [1]
光电子学 [1]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共16条,第1-10条
帮助
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
A study on repeatable and universal growth morphology optimization for nanowires grown on Si substrates
期刊论文
Vacuum, 2022, 卷号: 201
作者:
Wang, Xiaoye
;
Bai, Xue
;
Yang, Xiaoguang
;
Du, Wenna
;
Yang, Tao
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2022/06/20
Crystal defects
Gallium alloys
III-V semiconductors
Indium alloys
Metallorganic chemical vapor deposition
Morphology
Nanowires
Semiconducting indium gallium arsenide
Semiconductor alloys
Silicon
Substrates
Growth morphology
High-temperature annealing
Inas nanowire
Metal-organic chemical vapour depositions
Optimisations
Parasitic island
Parasitics
Si substrates
Substrate surface
Treatment methods
Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure
期刊论文
CHINESE OPTICS LETTERS, 2018, 卷号: 16
作者:
Jia, Yan
;
Yu, Qingnan
;
Li, Fang
;
Wang, Mingqing
;
Lu, Wei
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/12/30
Gallium compounds
III-V semiconductors
Indium
Indium alloys
Optical pumping
Quantum well lasers
Semiconducting indium gallium arsenide
Semiconductor alloys
Semiconductor quantum wells
Strain
Edge-emitting device
Experimental investigations
Gain characteristic
Material growth
Multiple wavelengths
Photoluminescence spectrum
Quantum well structures
Strain configurations
Gallium alloys
Study of molecular-beam epitaxy growth on patterned gaas (1 0 0) substrates by masked indium ion implantation
期刊论文
Journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:
Zhou, Huiying
;
Qu, Shengchun
;
Jin, Peng
;
Xu, Bo
;
Ye, Xiaoling
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2019/05/12
Atom force microscopy
Nanostructures
Molecular-beam epitaxy
Nanomaterials
Semiconducting gallium arsenide
2-5m InAs/GaSb superlattices infrared photodetector
期刊论文
hongwai yu jiguang gongcheng/infrared and laser engineering, 2011, 卷号: 40, 期号: 8, 页码: 1403-1406
Xu, Yingqiang
;
Tang, Bao
;
Wang, Guowei
;
Ren, Zhengwei
;
Niu, Zhichuan
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2012/06/14
Alignment
Atomic force microscopy
Atomic spectroscopy
Detectors
Epitaxial growth
Gallium alloys
Gallium arsenide
Indium arsenide
Infrared detectors
Molecular beam epitaxy
Molecular beams
Optoelectronic devices
Semiconducting gallium
Superlattices
Transmission electron microscopy
X ray diffraction
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
期刊论文
optoelectronics letters, 2011, 卷号: 7, 期号: 5, 页码: 325-329
Zhu, Yan
;
Ni, Hai-qiao
;
Wang, Hai-li
;
He, Ji-fang
;
Li, Mi-feng
;
Shang, Xiang-jun
;
Niu, Zhi-chuan
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2012/06/14
Epitaxial growth
Gallium arsenide
Growth(materials)
Molecular beam epitaxy
Semiconducting gallium
Semiconducting indium
Semiconductor quantum wells
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:
Xu B
;
Jin P
;
Ye XL
收藏
  |  
浏览/下载:63/1
  |  
提交时间:2011/07/05
Atom force microscopy
Nanostructures
Molecular-beam epitaxy
Nanomaterials
Semiconducting gallium arsenide
QUANTUM-DOTS
ANODIC ALUMINA
ARRAYS
PLACEMENT
INAS
Fabrication of a novel lumped electro-absorption modulator with a lower RC-time constant
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 105002
Qiu, Yingping
;
Wang, Yang
;
Shao, Yongbo
;
Zhou, Daibing
;
Liang, Song
;
Zhao, Lingjuan
;
Wang, Wei
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2012/06/14
Absorption
Capacitance
Fabrication
Light extinction
Semiconducting indium gallium arsenide
Waveguides
Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103002
Zhang, Yu
;
Wang, Guowei
;
Tang, Bao
;
Xu, Yingqiang
;
Xu, Yun
;
Song, Guofeng
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2012/06/14
Buffer layers
Epitaxial growth
Gallium alloys
Indium antimonides
Molecular beam epitaxy
Molecular beams
Optical waveguides
Optimization
Semiconducting gallium arsenide
Semiconductor quantum wells
Tellurium
Tellurium compounds
Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation
期刊论文
Journal of Crystal Growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575
作者:
Zhou, Huiying
;
Qu, Shengchun*
;
Jin, Peng
;
Xu, Bo
;
Ye, Xiaoling
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/28
A1. Atom force microscopy
A1. Nanostructures
A3. Molecular-beam epitaxy
B1. Nanomaterials
B2. Semiconducting gallium arsenide
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy
期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.)
;
Zeng YP (Zeng Y. P.)
;
Wang BQ (Wang B. Q.)
;
Zhu ZP (Zhu Z. P.)
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2010/04/11
characterization
point defects
molecular beam epitaxy
semiconducting gallium compounds
semiconducting indium compounds
semiconducting ternary compounds
1.55 MU-M
QUANTUM-WELLS
TEMPERATURE
GAAS
©版权所有 ©2017 CSpace - Powered by
CSpace