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半导体研究所 [17]

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	Catalyst-free growth of single crystalline beta-Ga2O3 microbelts on patterned sapphire substrates 期刊论文 JOURNAL OF CRYSTAL GROWTH, 2019, 卷号: 509, 页码: 91-95 作者: Feng, Qiuju; Li, Tongtong; Li, Fang; Li, Yunzheng; Shi, Bo 收藏 \| 浏览/下载：12/0 \| 提交时间：2019/12/02 Low dimensional structures Characterization Chemical vapor deposition processes Semiconducting gallium compounds
	Thermal and nonthermal melting of III-V compound semiconductors 期刊论文 PHYSICAL REVIEW B, 2019, 卷号: 99 作者: Medvedev, Nikita; Fang, Zhaoji; Xia, Chenyi; Li, Zheng 收藏 \| 浏览/下载：9/0 \| 提交时间：2019/12/30 Aluminum arsenide Antimony compounds Electrons Free electron lasers Gallium arsenide Gallium phosphide Melting Semiconducting gallium arsenide Born-Oppenheimer approximation Disordered state Electronic excitation High density liquids Non thermal effect Non-Born Oppenheimer Thermal phase transition Tight binding methods III-V semiconductors
	Experimental investigation of loss and gain characteristics of an abnormal InxGa1-xAs/GaAs quantum well structure 期刊论文 CHINESE OPTICS LETTERS, 2018, 卷号: 16 作者: Jia, Yan; Yu, Qingnan; Li, Fang; Wang, Mingqing; Lu, Wei 收藏 \| 浏览/下载：14/0 \| 提交时间：2019/12/30 Gallium compounds III-V semiconductors Indium Indium alloys Optical pumping Quantum well lasers Semiconducting indium gallium arsenide Semiconductor alloys Semiconductor quantum wells Strain Edge-emitting device Experimental investigations Gain characteristic Material growth Multiple wavelengths Photoluminescence spectrum Quantum well structures Strain configurations Gallium alloys
	非真空纳米粒子墨水法制备CIGS薄膜太阳电池吸收层学位论文 2017, 2015 崔鑫收藏 \| 浏览/下载：6/0 \| 提交时间：2017/06/20 铜铟镓硒纳米粒子非真空 CIGS Nanoparticles Non-vaccum
	Significant improvement in the thermoelectric performance of Sb-incorporated chalcopyrite compounds Cu18Ga25Sb: XTe50- x (x = 0-3.125) through the coordination of energy band and crystal structures 期刊论文 Journal of Materials Chemistry A, 2017, 卷号: 5, 期号: 46, 页码: 24199-24207 作者: Zhu, Junhao; Luo, Yong; Cai, Gemei; Liu, Xianglian; Du, Zhengliang 收藏 \| 浏览/下载：17/0 \| 提交时间：2020/11/14 Carrier concentration Copper compounds Crystal structure Semiconducting gallium compounds Semiconducting tellurium compounds Thermoelectricity Valence bands Chalcopyrite semiconductor Hall carrier concentrations Lattice disorders Low thermal conductivity Power factors Structure distortions Ternary chalcopyrites Thermoelectric performance
	Influence of in content in InGaN barriers on crystalline quality and carrier transport of GaN-based light-emitting diodes (EI收录) 期刊论文 Journal of Physics D: Applied Physics, 2016, 卷号: 49 作者: Lin, Zhiting[1,2]; Wang, Haiyan[1,2]; Lin, Yunhao[1,2]; Yang, Meijuan[1,2]; Wang, Wenliang[1,2] 收藏 \| 浏览/下载：13/0 \| 提交时间：2019/04/24 Carrier concentration Crystalline materials Diodes Efficiency Gallium alloys Gallium nitride Quantum efficiency Semiconducting indium compounds Semiconductor quantum wells
	Effect of post treatment for cu-cr source/drain electrodes on a-igzo tfts (EI收录) 期刊论文 Materials, 2016, 卷号: 9, 页码: 1-5 作者: Hu, Shiben[1]; Fang, Zhiqiang[1]; Ning, Honglong[1]; Tao, Ruiqiang[1]; Liu, Xianzhe[1] 收藏 \| 浏览/下载：15/0 \| 提交时间：2019/04/24 Amorphous films Amorphous semiconductors Carrier concentration Copper Copper alloys Electrodes Gallium alloys Indium Indium alloys Interfaces (materials) Semiconducting indium compounds Semiconductor materials
	The research on extraction efficiency of LED by lateral surface triangle roughening 其他 2012-01-01 Chen, Xiao; Fang, Peifeng; Lin, Bin; Liu, Baolin; Zhu, Lihong; 刘宝林收藏 \| 浏览/下载：7/0 \| 提交时间：2015/07/22 Efficiency Gallium nitride Measurements Semiconducting gallium compounds Sensor networks
	The explanation of InN bandgap discrepancy based on experiments and first-principle calculations 期刊论文 physics letters a, 2011, 卷号: 375, 期号: 7, 页码: 1152-1155 作者: Li JB 收藏 \| 浏览/下载：59/6 \| 提交时间：2011/07/05 First principle calculation Indium nitride Band gap Defect INITIO MOLECULAR-DYNAMICS AUGMENTED-WAVE METHOD INDIUM NITRIDE GAP PSEUDOPOTENTIALS SEMICONDUCTORS IMPURITIES ABSORPTION DEFECTS ALLOYS
	Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 10, 页码: 103002 Zhang, Yu; Wang, Guowei; Tang, Bao; Xu, Yingqiang; Xu, Yun; Song, Guofeng 收藏 \| 浏览/下载：19/0 \| 提交时间：2012/06/14 Buffer layers Epitaxial growth Gallium alloys Indium antimonides Molecular beam epitaxy Molecular beams Optical waveguides Optimization Semiconducting gallium arsenide Semiconductor quantum wells Tellurium Tellurium compounds

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