The explanation of InN bandgap discrepancy based on experiments and first-principle calculations
Li JB
刊名physics letters a
2011
卷号375期号:7页码:1152-1155
关键词First principle calculation Indium nitride Band gap Defect INITIO MOLECULAR-DYNAMICS AUGMENTED-WAVE METHOD INDIUM NITRIDE GAP PSEUDOPOTENTIALS SEMICONDUCTORS IMPURITIES ABSORPTION DEFECTS ALLOYS
ISSN号0375-9601
通讯作者liu, cr, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. supermanliu5@semi.ac.cn ; jbli@semi.ac.cn
学科主题半导体物理
收录类别SCI
资助信息chinese academy of sciences ; national science fund for distinguished young scholar [60925016]; national high technology research and development program of china [2009aa034101]
语种英语
公开日期2011-07-05 ; 2011-07-15
附注indium nitride (inn) films with different free electron concentration and optical bandgap were grown either directly on sapphire substrate or on pre-covered gallium nitride (gan) buffer through metal-organic chemical vapor deposition (mocvd) method. based on first-principle calculations, we confirm that the widening of inn optical bandgap reported before is caused by high density of free electrons. to find the contributor of the free electrons, the characteristic energetic levels of o-n, v-n and si-in are investigated. we find that they are all high enough to uplift the optical bandgap from about 0.78 ev to 1.9 ev, which almost can't be enlarged further when it reaches 2.09 ev. (c) 2011 elsevier b.v. all rights reserved.
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/20919]  
专题半导体研究所_半导体超晶格国家重点实验室
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Li JB. The explanation of InN bandgap discrepancy based on experiments and first-principle calculations[J]. physics letters a,2011,375(7):1152-1155.
APA Li JB.(2011).The explanation of InN bandgap discrepancy based on experiments and first-principle calculations.physics letters a,375(7),1152-1155.
MLA Li JB."The explanation of InN bandgap discrepancy based on experiments and first-principle calculations".physics letters a 375.7(2011):1152-1155.
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