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Smart Design of Resistive Switching Memory by an In Situ Current-Induced Oxidization Process on a Single Crystalline Metallic Nanowire 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2021, 卷号: 7, 期号: 5, 页码: -
作者:  Shih, Yu-Chuan;  Lee, Ling;  Liang, Kai-De;  Manikandan, Arumugam;  Liu, Wen-Wu
收藏  |  浏览/下载:5/0  |  提交时间:2021/03/12
Effects of high energy heavy ion irradiation on resistive switches 期刊论文
MICROELECTRONIC ENGINEERING, 2020, 卷号: 231, 页码: 6
作者:  Guo, Xiangyu;  Liu, Jiande;  Wang, Qi;  He, Deyan
收藏  |  浏览/下载:17/0  |  提交时间:2021/12/15
一种加速区块链MCMC随机选择的ReRAM及其工作方法 专利
申请日期: 2019-06-18, 公开日期: 2019-06-18
作者:  贾智平;  王倩;  王天雨;  刘珂;  申兆岩
收藏  |  浏览/下载:17/0  |  提交时间:2020/01/04
Architectural Exploration to Address the Reliability Challenges for ReRAM-Based Buffer in SSD 期刊论文
IEEE Transactions on Circuits and Systems I: Regular Papers, 2019, 卷号: 66, 页码: 226-238
作者:  Zhao, Xiaoqing;  Sun, Hongbin;  Liu, Longjun;  Yang, Yang;  Dai, Liangliang
收藏  |  浏览/下载:17/0  |  提交时间:2019/11/19
Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits 期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 1, 页码: 159-172
作者:  Chen, Xiaoming;  Niemier, Michael;  Hu, Xiaobo Sharon;  Yin, Xunzhao
收藏  |  浏览/下载:70/0  |  提交时间:2019/04/03
Architectural Exploration to Address the Reliability Challenges for ReRAM-Based Buffer in SSD 期刊论文
IEEE Transactions on Circuits and Systems I: Regular Papers, 2019, 卷号: Vol.66 No.1, 页码: 226-238
作者:  Xiaoqing Zhao;  Liangliang Dai;  Nanning Zheng;  Xiulong Wu;  Yang Yang
收藏  |  浏览/下载:20/0  |  提交时间:2019/04/24
Architectural Exploration to Address the Reliability Challenges for ReRAM-Based Buffer in SSD 期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: Vol.66 No.1, 页码: 226-238
作者:  Zheng, Nanning;  Liu, Longjun;  Yang, Yang;  Wu, Xiulong;  Zhao, Xiaoqing
收藏  |  浏览/下载:11/0  |  提交时间:2019/04/24
ReRAM  solid  state  drive  reliability  endurance  bit  error  rate  
Architectural Exploration to Address the Reliability Challenges for ReRAM-Based Buffer in SSD 期刊论文
IEEE Transactions on Circuits and Systems I: Regular Papers, 2019, 卷号: Vol.66 No.1, 页码: 226-238
作者:  Zhao, Xiaoqing;  Sun, Hongbin;  Liu, Longjun;  Yang, Yang;  Dai, Liangliang
收藏  |  浏览/下载:3/0  |  提交时间:2019/12/17
A ReRAM-Based Row-Column-Oriented Memory Architecture for Convolutional Neural Networks 期刊论文
IEICE TRANSACTIONS ON ELECTRONICS, 2019, 卷号: E102C No.7, 页码: 580-584
作者:  Chen, Y;  Zhang, J;  Xu, YB;  Zhang, YJ;  Zhang, RY
收藏  |  浏览/下载:18/0  |  提交时间:2019/12/17
ReRAM-based processing-in-memory architecture for blockchain platforms 期刊论文
Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC, 2019, 页码: 615-620
作者:  Wang, Fang;  Shen, Zhaoyan;  Han, Lei;  Shao, Zili
收藏  |  浏览/下载:7/0  |  提交时间:2019/12/11


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